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IEEE Electron Device Letters

Volumn 17, Issue 5, 1996, Pages 211-213

Comparison of time-to-failure of GeSi and Si bipolar transistors

(6) Neugroschel, A a,b Sah, Chih Tang a,b Ford, J M a,c Steele, J a,c Tang, R c Stein, C c

a IEEE

b University of Florida (United States)

c MOTOROLA INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FAILURE ANALYSIS; RELIABILITY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON WAFERS;

CURRENT ACCELERATION METHOD; EMITTER BASE JUNCTION; REVERSE BIAS STRESS; TIME TO FAILURE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030150147 PISSN: 07413106 EISSN: None Source Type: Journal
DOI: 10.1109/55.491832 Document Type: Review

Times cited : (20)

References (8)

1
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- (1995) IEEE Trans. Electron Devices , vol.42 , pp. 455-468
- Harame, D.L.¹ Comfort, J.H.² Cressler, J.D.³ Crabbé, E.F.⁴ Sun, J.Y.-C.⁵ Meyerson, B.S.⁶ Tice, T.⁷

2
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- _. "Si/SiGe epitaxial-base transistors-Part II: Process integration and analog applications," IEEE Trans. Electron Devices, vol. 42, pp. 469-482, Mar. 1995.
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3
- 0024123241
- Modeling hot-carrier in polysilicon emitter bipolar transistors
- Dec.
- J. D. Burnett and C. Hu, "Modeling hot-carrier in polysilicon emitter bipolar transistors," IEEE Trans. Electron Devices, vol. 35, pp. 2238-2244, Dec. 1998.
- (1998) IEEE Trans. Electron Devices , vol.35 , pp. 2238-2244
- Burnett, J.D.¹ Hu, C.²

4
- 0026836906
- F E degradation in BiCMOS transistors
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- 1992 Proc. 30th Int. Reliability Phys. Symp. , pp. 58-62
- Varker, C.J.¹ Pettengill, D.² Shiau, W.-T.³ Reuss, B.⁴

5
- 0029345609
- Current acceleration for rapid time-to-failure determination of bipolar junction transistors under emitter-base reverse-bias stress
- July
- A. Neugroschel, C.-T. Sah, and M. S. Carroll, "Current acceleration for rapid time-to-failure determination of bipolar junction transistors under emitter-base reverse-bias stress," IEEE Trans. Electron Devices, vol. 42, pp. 1380-1383, July 1995.
- (1995) IEEE Trans. Electron Devices , vol.42 , pp. 1380-1383
- Neugroschel, A.¹ Sah, C.-T.² Carroll, M.S.³

6
- 0030105361
- Accelerated reverse emitter-base stress methodologies and time-to-failure applications
- Mar.
- _. "Accelerated reverse emitter-base stress methodologies and time-to-failure applications," IEEE Electron Device Lett., vol. 17, pp. 112-114, Mar. 1996.
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7
- 0027656861
- High-performance SiGe epitaxial base bipolar transistors produced by a reduced-pressure CVD reactor
- Sept.
- M. Hong, E. de Frésart, J. Steele, A. Zlotnicka, C. Stein, G. Tam, M. Racanelli, L. Knoch, Y.-C. See, and K. Evans, "High-performance SiGe epitaxial base bipolar transistors produced by a reduced-pressure CVD reactor," IEEE Electron Device Lett., vol. 14, pp. 450-452, Sept. 1993.
- (1993) IEEE Electron Device Lett. , vol.14 , pp. 450-452
- Hong, M.¹ De Frésart, E.² Steele, J.³ Zlotnicka, A.⁴ Stein, C.⁵ Tam, G.⁶ Racanelli, M.⁷ Knoch, L.⁸ See, Y.-C.⁹ Evans, K.¹⁰

8
- 4243156080
- to be published
- A. Neugroschel, C.-T. Sah, and J. M. Ford, to be published.
- Neugroschel, A.¹ Sah, C.-T.² Ford, J.M.³

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