A manufacturable poly-emitter graded-SiGe HBT technology for wireless and mixed-signal applications

Applied Surface Science

Volumn 102, Issue , 1996, Pages 194-201

  Nguyen Ngoc, D ^b   Sunderland, D A ^b   Ahlgren, D C ^b   Jeng, S J ^b   Gilbert, M M ^a   Malinowski, J C ^a   Schonenberg, K T ^a   Stein, K S ^b   Meyerson, B S ^a   Harame, D L ^a  

^a IBM RESEARCH   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ENERGY GAP; PASSIVE NETWORKS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

BANDGAP ENGINEERING; MIXED SIGNAL APPLICATIONS; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION (UHV/CVD);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030564801     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00048-7     Document Type: Article

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