Low-resistance bandgap-engineered W/Si1-xGex/Si contacts

IEEE Electron Device Letters

Volumn 17, Issue 7, 1996, Pages 360-362

  Chieh, Yuen Shung ^b   Krusius, J Peter ^a,b   Green, Dannellia ^c   Öztürk, Mehmet ^a,c  

^a IEEE

^b Cornell University   (United States)

^c North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; ANNEALING; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE; TITANIUM COMPOUNDS; ULSI CIRCUITS;

BANDGAP ENGINEERED JUNCTIONS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; LOW RESISTANCE BANDGAP CONTACTS; OUTDIFFUSION; TITANIUM SILICIDE TECHNOLOGY; ULTRA LOW CONTACT RESISTIVITY;

ELECTRIC CONTACTS;

EID: 0030182791     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.506367     Document Type: Article

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