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Volumn 17, Issue 2, 1996, Pages 59-61

Mobility simulation of a novel Si/SiGe FET structure

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; MOS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE;

EID: 0030087298     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.484123     Document Type: Article
Times cited : (12)

References (12)
  • 1
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    • Silicon MOS transconductance scaling into the overshoot regime
    • M. R. Pinto, E. Sangiorgi, and J. Bude, "Silicon MOS transconductance scaling into the overshoot regime," IEEE Electron Device Lett., vol. 14, pp. 375-378, 1993.
    • (1993) IEEE Electron Device Lett. , vol.14 , pp. 375-378
    • Pinto, M.R.1    Sangiorgi, E.2    Bude, J.3
  • 2
    • 36449008424 scopus 로고
    • Extremely high electron mobility in Si/SiGe modulation-doped heterostructures
    • K. Ismail, M. Arafa, K. L. Saenger, J. O. Chu, and B. S. Meyerson, "Extremely high electron mobility in Si/SiGe modulation-doped heterostructures," Appl. Phys. Lett., vol. 66, pp. 1077-1079, 1995.
    • (1995) Appl. Phys. Lett. , vol.66 , pp. 1077-1079
    • Ismail, K.1    Arafa, M.2    Saenger, K.L.3    Chu, J.O.4    Meyerson, B.S.5
  • 3
    • 21544468810 scopus 로고
    • Room-temperature electron mobility in strained Si/SiGe heterostructures
    • S. F. Nelson, K. Ismail, J. O. Chu, and B. S. Meyerson, "Room-temperature electron mobility in strained Si/SiGe heterostructures," Appl. Phys. Lett., vol. 63, pp. 367-369, 1993.
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 367-369
    • Nelson, S.F.1    Ismail, K.2    Chu, J.O.3    Meyerson, B.S.4
  • 6
    • 33750668607 scopus 로고
    • Band lineups and deformation potentials in the model-solid theory
    • C. Van de Walle, "Band lineups and deformation potentials in the model-solid theory," Phys. Rev. B, vol. 39, pp. 1871-1883, 1989.
    • (1989) Phys. Rev. B , vol.39 , pp. 1871-1883
    • Van De Walle, C.1
  • 7
    • 4243227379 scopus 로고
    • Monte Carlo study of electron transport in silicon inversion layers
    • M. V. Fischetti and S. Laux, "Monte Carlo study of electron transport in silicon inversion layers," Phys. Rev. B, vol. 48, pp. 2244-2274, 1993.
    • (1993) Phys. Rev. B , vol.48 , pp. 2244-2274
    • Fischetti, M.V.1    Laux, S.2
  • 8
    • 0025575633 scopus 로고
    • Advanced electron mobility model of MOS inversion layer considering 2-D-degenerated electron gas physics
    • M. Ishizaka, T. Iizuka, S. Ohi, M. Fukuma, and H. Mikoshiba, "Advanced electron mobility model of MOS inversion layer considering 2-D-degenerated electron gas physics," in IEDM Tech. Dig., 1990, pp. 763-766.
    • (1990) IEDM Tech. Dig. , pp. 763-766
    • Ishizaka, M.1    Iizuka, T.2    Ohi, S.3    Fukuma, M.4    Mikoshiba, H.5
  • 9
    • 35949025517 scopus 로고
    • The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
    • C. Jacoboni and L. Reggiani, "The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials," Rev. Mod. Phys., vol. 55, pp. 645-705, 1983.
    • (1983) Rev. Mod. Phys. , vol.55 , pp. 645-705
    • Jacoboni, C.1    Reggiani, L.2
  • 10
    • 0027839374 scopus 로고
    • Evidence of real-space hot-electron transfer in high-mobility, strained-Si multilayer MOSFET's
    • J. Welser, J. L. Hoyt, and J. F. Gibbons, "Evidence of real-space hot-electron transfer in high-mobility, strained-Si multilayer MOSFET's, in IEDM Tech. Dig., 1993, pp. 545-548.
    • (1993) IEDM Tech. Dig. , pp. 545-548
    • Welser, J.1    Hoyt, J.L.2    Gibbons, J.F.3
  • 11
    • 3843105796 scopus 로고    scopus 로고
    • private communication
    • Y.-H. Xie, private communication.
    • Xie, Y.-H.1
  • 12
    • 0028736418 scopus 로고
    • Mobility simulation in Si/SiGe heterostructure FET's
    • A. Abramo, J. Bude, F. Venturi, and R. Pinto, "Mobility simulation in Si/SiGe heterostructure FET's," in IEDM Tech. Dig., 1994, p. 731.
    • (1994) IEDM Tech. Dig. , pp. 731
    • Abramo, A.1    Bude, J.2    Venturi, F.3    Pinto, R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.