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Journal of Applied Physics

Volumn 79, Issue 3, 1996, Pages 1441-1447

Strain relaxation of Si/Ge multilayers: Coherent islands formation and their evolution as a function of the strain

(6) Carlino, E a,b Giannini, C a Gerardi, C a Tapfer, L a Mader K A b Von Kanel H b

a Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali (Italy)

b ETH ZURICH (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000708524 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.360982 Document Type: Article

Times cited : (12)

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