Novel BSD protection transistor including SiGe buried layer to reduce local temperature overheating

IEEE Transactions on Electron Devices

Volumn 43, Issue 3, 1996, Pages 479-489

  Choi, Chang Hoon ^a   Park, Young Kwan ^a   Lee, Sang Hoon ^a   Kim, Kyung Ho ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC DISCHARGES; ELECTRIC RESISTANCE; HEATING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES;

BIPOLAR CURRENT; ELECTROSTATIC DISCHARGE PROTECTION TRANSISTOR; ELECTROTHERMAL SIMULATION; LATTICE TEMPERATURE; SNAPBACK VOLTAGE;

MOSFET DEVICES;

EID: 0030109340     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.485664     Document Type: Article

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