|
Volumn 102, Issue , 1996, Pages 189-193
|
Silicium germanium heterodevices
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CRYSTAL LATTICES;
DISLOCATIONS (CRYSTALS);
HETEROJUNCTION BIPOLAR TRANSISTORS;
JUNCTION GATE FIELD EFFECT TRANSISTORS;
MICROELECTRONICS;
PASSIVATION;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR QUANTUM DOTS;
SIGNAL RECEIVERS;
SURFACE TREATMENT;
ADATOM BEHAVIOR;
ELASTIC STRAIN;
EQUILIBRIUM MODELS;
LATTICE MISMATCH;
MISFIT DISLOCATIONS;
SURFACE CORRUGATIONS;
HETEROJUNCTIONS;
|
EID: 0030564878
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/0169-4332(96)00047-5 Document Type: Article |
Times cited : (28)
|
References (16)
|