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Volumn 102, Issue , 1996, Pages 189-193

Silicium germanium heterodevices

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); HETEROJUNCTION BIPOLAR TRANSISTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; MICROELECTRONICS; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SIGNAL RECEIVERS; SURFACE TREATMENT;

EID: 0030564878     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00047-5     Document Type: Article
Times cited : (28)

References (16)
  • 3
    • 30244495871 scopus 로고
    • Properties of strained and relaxed SiGe
    • ed. E. Kasper
    • R. Hull, in: Properties of Strained and Relaxed SiGe, ed. E. Kasper, INSPEC, IEE (1995) pp. 17, 28.
    • (1995) INSPEC, IEE , pp. 17
    • Hull, R.1
  • 6
    • 84859538906 scopus 로고
    • R. People and J.C. Bean, Appl. Phys. Lett. 47 (1985) 322; 49 (1986) 229.
    • (1986) Appl. Phys. Lett. , vol.49 , pp. 229
  • 8
    • 30244556943 scopus 로고
    • Properties of strained and relaxed sige
    • ed. E. Kasper
    • J. Sturm, in: Properties of Strained and Relaxed SiGe, ed. E. Kasper, INSPEC, IEE (1995) p. 193.
    • (1995) INSPEC, IEE , pp. 193
    • Sturm, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.