Fabrication of thin film transistors using a Si/Si1-xGex/Si triple layer film on a SiO2 substrate

IEEE Electron Device Letters

Volumn 17, Issue 5, 1996, Pages 205-207

  Kim, Jin Hyeok ^a   Lee, Jeong Yong ^a   Kim, Hong Seung ^a   Song, Yoon Ho ^b   Nam, Kee Soo ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; CRYSTALLIZATION; ELECTRON DEVICE MANUFACTURE; FABRICATION; MULTILAYERS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SUBSTRATES; THIN FILMS;

FIELD EFFECT MOBILITY; POLYCRYSTALLINE SILICON; TRIPLE LAYER FILMS;

THIN FILM TRANSISTORS;

EID: 0030150780     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.491830     Document Type: Article

References (11)

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