On the optimization of sige-base bipolar transistors

IEEE Transactions on Electron Devices

Volumn 43, Issue 9, 1996, Pages 1518-1524

  Hueting, Raymond J E ^a,b   Slotboom, Jan W ^a   Pruijmboom, Armand ^a   De Boer, Wiebe B ^a   Eugene Timmering, C ^a   Cowern, Nicholas E B ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ENERGY GAP; EPITAXIAL GROWTH; OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES;

BANDGAP ENGINEERING; GUMMEL NUMBER; MAXIMUM CUTOFF FREQUENCY;

BIPOLAR TRANSISTORS;

EID: 0030242806     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.535344     Document Type: Article

References (19)

1. G. L. Patton, J. H. Comfort, B. S. Meyerson, E. F. Crabbé. G. J. Scilla. E. de Fresart, J. M. C. Stork, J. Y.-C. Sun, D. L. Harame, and J. N. Burghartz, "75-GHz /, SiGe-base heterojimction bipolar transistors," IEEE Electron Device Lett., vol. EDL-11, no. 4, pp. 171-173, 1990.
2. A. Schuppen, U. König, A. Grüble, H. Kibbel, and U. Erben, "The differential SiGe HBT," in Proc. ESSDERC'94, Sept. 1994, pp. 469-472.
3. E. F. Crabbé, J. H. Comfort. J. D. Cressler, J. Y.-C. Sun, and J. M. C. Stork, "High-low polysilicon-emitter SiGe-base bipolar transistors," IEEE Electron Device Lett., vol. EDL-14, no. 10, pp. 478-4180, 1993.
4. A. Pruijmboom, D. Terpstra, C. E. Timmcring, W. B. dc Boer, M. J. J. Theunissen, J. W. Slotboom, R. J. E. Hueting, and J. J. E. M. Hageraats, "Selective-epitaxial base technology with 14 ps ECL-gate delay, for low power wide-band communication systems," in Proc. IEDM'95, Dec. 1995, pp. 747-750.
5. W. B. de Boer, M. J. J. Theunissen, and K. H. J. van der Linden, "The necessity of RTCVD in advanced epitaxial growth of Si and SiGe," MRS Spring Meet., San Francisco, Apr. 20, 1990.
6. D. C. Houghton, C. J. Gibbings, C. G. Tuppen, M. H. Lyons, and M. A. G. Halliwell, "The structural stability of uncapped versus buried Sii-4Gex strained layers through high temperature processing," Thin Solid Films, vol. 183, pp. 171-182, 1989.
7. D. B. M. Klaassen, "A unified mobility model for device simulation I. Model equations and concentration dependence," Solid-Slate Electron., vol. 35, no. 7, pp. 953-959, 1992.
8. D. B. M. Klaassen, "A unified mobility model for device simulation II. Temperature dependence of carrier mobility and lifetime," Solid-Slate Electron., vol. 35, no. 7. pp. 961-967, 1992.
9. Technology Modeling Associates, Inc., TMA MEDICI Two-Dimensional Device Simulation Program, version 1.1, vol. 2, 1993.
10. R. J. E. Hueting and J. W. Slotboom, "Reduced sidewall effects in SiGe-base bipolar transistors," in Proc. ESSDERC'94, Sept. 1994, pp. 67-70.
11. R. People, "Physics and applications of Ge-4Sii-4/Si strained-layer heterostructures," EE J. Quantum Electron, vol. QE-22, no. 9, pp. 1696-1710, 1986.
12. J. W. Slothoom, G. Streutker, A. Pruijmhoom, and D. J. Gravesteijn, "Parasitic energy barriers in SiGe HBT's," IEEE Electron Device Lett., vol. 12, no. 9, pp. 486-488, 1991.
13. E. J. Prinz, "Base transport and vertical profile engineering in Si/Sii-iGe-4/Si heterojunction bipolar transistors," Ph.D. Dissertation, Princeton University, Princeton, NJ, Oct. 1992.
14. x/Si HBT's with heavy base doping," IEEE Trans. Electron Devices, vol. 43, no. 3, pp. 457-4166, March 1996.
15. J. W. Slotboom, "Analysis of bipolar transistors." Ph.D. Dissertation, Eindhoven University of Technology, The Netherlands, Oct. 1977.
16. D. B. M. Klaassen. J. W. Slotboom, and H. C. de Graaff, "Unified apparent bandgap narrowing narrowing in n- and p-type silicon," Solid-State Electron., vol. 35, no. 2, pp. 125-129, 1992.
17. S. P. Morgan and F. M. Smits, "Potential distribution and capacitance of a graded p-n junction," Bell Syst. Tech. J., vol. 39, pp. 1573-1602, 1960.
18. [18[ P. J. Wijnen and R. D. Gardner, "A new approach to optimising the base profile for high-speed bipolar transistors," IEEE Election Device Lett., vol. 11, no. 4, pp. 149-152, 1990.
19. (19] S. M. Hu, "Experimental study of diffusion and segregation in a Si(uej;Sii-r) heterostructure," Phys, Rev. Lett., vol. 67, no. 11, pp. 1450-1453, 1991.