On the active surface layer in CF3+ etching of Si: atomistic simulation and a simple mass balance model

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 2, 2000, Pages 411-416

  Abrams, Cameron F ^a   Graves, David B ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FLUOROCARBONS; ION BOMBARDMENT; MATERIALS BALANCE; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; PLASMA ETCHING;

ATOMISTIC SIMULATION; MASS BALANCE MODEL; RESIDENCE TIME DISTRIBUTION;

SEMICONDUCTING SILICON;

EID: 0034155683     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582202     Document Type: Article

References (15)

1. R. A. H. Heinecke, Solid-State Electron. 18, 1146 (1975).
2. T. E. F. M. Standaert, M. Schaepkens, N. R. Ruger, P. G. M. Sebel, G. S. Oehrlein, and J. M. Cook, J. Vac. Sci. Technol. A 16, 239 (1998).
3. K. Hirobe, K. Kawamura, and K. Nojiri, J. Vac. Sci. Technol. B 5, 594 (1987).
4. J. Pelletier and M. J. Cooke, J. Appl. Phys. 65, 464 (1989).
5. C. F. Abrams and D. B. Graves, J. Appl. Phys. 86, 5398 (1999).
6. D. C. Gray, H. H. Sawin, and J. W. Butterbaugh, J. Vac. Sci. Technol. A 9, 779 (1991).
7. J. Tersoff, Phys. Rev. B 38, 9902 (1988).
8. J. Tersoff, Phys. Rev. B 39, 5566 (1989).
9. D. W. Brenner, Phys. Rev. B 42, 9458 (1990).
10. J. Tanaka, C. F. Abrams, and D. B. Graves, J. Vac. Sci. Technol. A (submitted).
11. K. Beardmore and R. Smith, Philos. Mag. A 74, 1439 (1996).
12. L. Verlet, Phys. Rev. 159, 98 (1967).
13. H. J. C. Berendsen, J. P. M. Postma, W. F. van Gunsteren, A. DiNola, and J. R. Haak, J. Chem. Phys. 81, 3684 (1984).
14. C. Steinbrüchel, Appl. Phys. Lett. 55, 1960 (1989).
15. H. S. Fogler, Elements of Chemical Reaction Engineering, 2nd ed. (PTR Prentice Hall, Englewood Cliffs, NJ, 1992), pp. 708-758.