Effects of plasma processing parameters on the surface reactivity of OH(X2II) in tetraethoxysilane/O2 plasmas during deposition of SiO2

Journal of Physical Chemistry B

Volumn 101, Issue 48, 1997, Pages 10016-10023

  Bogart, K H A ^a,b   Cushing, J P ^a,c   Fisher, Ellen R ^a  

^a Department of Environmental and Radiological Health Sciences   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c Stanford Research Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; OXYGEN; PLASMA APPLICATIONS; SILANES; SUBSTRATES; SURFACE PHENOMENA; THERMAL EFFECTS;

RADICALS INTERACTING WITH SURFACES (IRIS) METHOD; TETRAETHOXYSILANES;

SILICA;

EID: 0031272202     PISSN: 10895647     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (50)

1. Lieberman, M. A.; Lichtenberg, A. J. Principles of Plasma Discharges and Materials Processing; John Wiley and Sons: New York, 1994.
2. Jansen, F. In Plasma Deposited Thin Films; Mort, J., Jansen, F., Ed.; Chemical Rubber: Boca Raton, FL, 1986.
3. Maeda, K.; Fisher, S. M. Solid State Technol. 1993, 36, 83.
4. Hills, G. W.; Harrus, A. S.; Thoma, M. J. Solid State Technol. 1990, 33, 127.
5. Raupp, G. B; Levedakis, D. A.; Cale, T. S. J. Vac. Sci. Technol. A 1995, 13, 676.
6. Stout, P. J.; Kushner, M. J. J. Vac. Sci. Technol. A 1993, 11, 2562.
7. Chang, C.-P.; Pai, C. S.; Hsieh, J. J. J. Appl. Phys. 1990, 67, 2119.
8. Tochitani, G.; Shimozuma, M.; Tagashira, H. J. Vac. Sci. Technol. A 1993, 11, 400.
9. Pai, C. S.; Chang, C.-P. J. Appl. Phys. 1990, 68, 793.
10. Deshmukh, S. C.; Aydil, E. S. J. Vac. Sci. Technol. B 1996, 14, 738. Deshmukh, S. C.; Aydil, E. S. J. Vac. Sci. Technol. A 1995, 13, 2355. Deshmukh, S. C.; Aydil, E. S. Appl. Phys. Lett. 1994, 65, 3185.
11. Deshmukh, S. C.; Aydil, E. S. J. Vac. Sci. Technol. B 1996, 14, 738. Deshmukh, S. C.; Aydil, E. S. J. Vac. Sci. Technol. A 1995, 13, 2355. Deshmukh, S. C.; Aydil, E. S. Appl. Phys. Lett. 1994, 65, 3185.
12. Deshmukh, S. C.; Aydil, E. S. J. Vac. Sci. Technol. B 1996, 14, 738. Deshmukh, S. C.; Aydil, E. S. J. Vac. Sci. Technol. A 1995, 13, 2355. Deshmukh, S. C.; Aydil, E. S. Appl. Phys. Lett. 1994, 65, 3185.
13. Selamoglu, N.; Mucha, J. A.; Ibbotson, D. E.; Flamm, D. L. J. Vac. Sci. Technol. B 1989, 7, 1345.
14. Fracassi, F.; d'Agostino, R.; Favia, P. J. Electrochem. Soc. 1992, 139, 2636.
15. Nishi, Y.; Funai, T.; Izawa, H.; Fujimoto, T.; Morimoto, H.; Ishii, M. Jpn. J. Appl. Phys. 1992, 31, 4570.
16. McCurdy, P. R.; Bogart, K. H. A.; Dalleska, N. F.; Fisher, E. R. Rev. Sci. Instrum. 1997, 68, 1684.
17. Ho, P.; Breiland, W. G.; Buss, R. J. J. Chem. Phys. 1989, 91, 2627.
18. Fisher, E. R.; Ho, P.; Breiland, W. G.; Buss, R. J. J. Phys. Chem. 1993, 97, 10287.
19. Fisher, E. R.; Ho, P.; Breiland, W. G.; Buss, R. J. J. Phys. Chem. 1992, 96, 9855.
20. McCurdy, P. R.; Ventura, V. A.; Fisher, E. R. Chem. Phys. Lett. 1997, 274, 120.
21. Bogart, K. H. A.; Cushing, J. P.; Fisher, E. R. Chem. Phys. Lett. 1997, 267, 377.
22. Buss, R. J.; Ho, P. IEEE Trans. Plasma Sci. 1996, 24, 79.
23. Buss, R. J.; Ho, P.; Weber, M. E. Plasma Chem. Plasma Process. 1993, 13, 61.
24. Cessou, A.; Stepowski, D. Combust. Sci. Technol. 1996, 118, 361. Allan, M. G.; McManus, K. R.; Sonnefroh, D. M.; Paul, P. H. Appl. Opt. 1995, 34, 6287.
25. Cessou, A.; Stepowski, D. Combust. Sci. Technol. 1996, 118, 361. Allan, M. G.; McManus, K. R.; Sonnefroh, D. M.; Paul, P. H. Appl. Opt. 1995, 34, 6287.
26. Tully, F. P.; Droege, A. T.; Koszykowski, M. L.; Melius, C. F. J. Phys. Chem. 1986, 90, 691. Tully, F. P.; Goldsmith, J. E. M. Chem. Phys. Lett. 1985, 116, 345.
27. Tully, F. P.; Droege, A. T.; Koszykowski, M. L.; Melius, C. F. J. Phys. Chem. 1986, 90, 691. Tully, F. P.; Goldsmith, J. E. M. Chem. Phys. Lett. 1985, 116, 345.
28. Brauers, T.; Aschmutat, U.; Brandenburger, U.; Dorn, H.-P.; Hausmann, M.; Hessling, M.; Hofzumahaus, A.; Holland, F.; Plass-Dülmer, C.; Ehhalt, D. H. Geophys. Res. Lett. 1996, 23, 2545.
29. This delay time accounts for the time required for the laser to trigger and fire, experimentally determined as 1.1 μs. Thus, a 1.3 μs gate delay corresponds to a 0.2 μs delay between excitation and collection of fluorescence by the ICCD.
30. German, K. R. J. Chem. Phys. 1975, 62, 2584.
31. Atkins, P. W. Physical Chemistry, 4th ed; W. H. Freeman and Company: New York, 1990.
32. Steinfeld, J. I. Molecules and Radiation; MIT: Cambridge, MA, 1985.
33. Coxon, J. A. Can. J. Phys. 1980, 58, 933.
34. Bogart, K. H. A.; Dalleska, N. F.; Bogart, G. R.; Fisher, E. R. J. Vac. Sci. Technol. A 1995, 13, 476.
35. Clyne, M. A. A.; McDermid, I. S. Dynamics of the Excited State; Lawley, K. P., Ed.; John Wiley and Sons: New York, 1982.
36. Bogart, K. H. A; Ramirez, S. K.; Campuzano, L. A.; Bogart, G. R.; Fisher, E. R. J. Vac. Sci. Technol. A, to be submitted.
37. A full excitation spectrum for OH (from 307.0 to 309.0 nm) is published in ref 19
38. Walkup, R. E.; Saenger, K. L.; Selwyn, G. S. J. Chem. Phys. 1986, 84, 2668.
39. Selwyn, G. S. J. Appl. Phys. 1986, 60, 2771.
40. Collart, E. H.; Baggerman, J. A. G.; Visser, R. J. J. Appl. Phys. 1995, 78, 47.
41. Levine, R. D.; Bernstein, R. B. Molecular Reaction Dynamics and Chemical Reactivity; Oxford University Press: New York, 1987; pp 426-428.
42. Park, C. R.; Wiesenfeld, J. R. J. Chem. Phys. 1991, 95, 8166.
43. Andresen, P.; Luntz, A. C. J. Chem. Phys. 1980, 72, 5842. Luntz, A. C.; Andresen, P. J. Chem. Phys. 1980, 72, 5851. Luntz, A. C. J. Chem. Phys. 1980, 73, 1143.
44. Andresen, P.; Luntz, A. C. J. Chem. Phys. 1980, 72, 5842. Luntz, A. C.; Andresen, P. J. Chem. Phys. 1980, 72, 5851. Luntz, A. C. J. Chem. Phys. 1980, 73, 1143.
45. Andresen, P.; Luntz, A. C. J. Chem. Phys. 1980, 72, 5842. Luntz, A. C.; Andresen, P. J. Chem. Phys. 1980, 72, 5851. Luntz, A. C. J. Chem. Phys. 1980, 73, 1143.
46. Jurgens, T. A.; Rogers, J. W., Jr. J. Phys. Chem. 1995, 99, 731.
47. Tedder, L. L.; Lu, G.; Crowell, J. E. J. Appl. Phys. 1991, 69, 7037.
48. Tedder, L. L.; Crowell, J. E.; Logan, M. A. J. Vac. Sci. Technol. A 1991, 9, 1002.
49. Crowell, J. E.; Tedder, L. L.; Cho, H.-C.; Cascarano, F. M.; Logan, M. A. J. Vac. Sci. Technol. A 1990, 8, 1864.
50. -3. A more complete discussion of this value is given in ref 19.