Effects of plasma processing parameters on the surface reactivity of OH(X2II) in tetraethoxysilane/O2 plasmas during deposition of SiO2

Journal of Physical Chemistry B

Volumn 101, Issue 48, 1997, Pages 10016-10023

  Bogart, K H A ^a,b   Cushing, J P ^a,c   Fisher, Ellen R ^a  

^a Immunology and Pathology   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c Stanford Research Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; OXYGEN; PLASMA APPLICATIONS; SILANES; SUBSTRATES; SURFACE PHENOMENA; THERMAL EFFECTS;

RADICALS INTERACTING WITH SURFACES (IRIS) METHOD; TETRAETHOXYSILANES;

SILICA;

EID: 0031272202     PISSN: 10895647     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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