Characterization of highly selective SiO2/Si3N4 etching of high-aspect-ratio holes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 4 SUPPL. B, 1996, Pages 2488-2493

  Hayashi, Hisataka ^a   Kurihara, Kazuaki ^a   Sekine, Makoto ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

C4F8 + Co plasma; Oxide etching; RIE lag

Indexed keywords

ASPECT RATIO; CARBON MONOXIDE; ELECTRIC CURRENT MEASUREMENT; FLUOROCARBONS; MASKS; PLASMAS; REACTIVE ION ETCHING; SILICA; SILICON NITRIDE;

CAPILLARY PLATES; CONTACT HOLES; HIGH ASPECT RATIO HOLES; ION TRANSPORT; NEUTRAL TRANSPORT; OXIDE ETCHING; REACTIVE ION ETCHING LAG;

PLASMA ETCHING;

EID: 0030121267     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2488     Document Type: Article

References (18)

1. J. Marks, K. Collins, C. L. Yang, D. Groechel, P. Keswick and C. Cunningham: Proc. Advanced Techniques for Integrated Circuit Processing II (The Society of Photo-Optical Instrumentation Engineers, Washington, 1992) Vol. 1803.
2. T. Sakai, H. Hayashi, J. Abe, K. Horioka and H. Okano: Proc. Dry Process Symp. 1993 (The Institute of Electrical Engineers of Japan, Tokyo, 1993) p. 193.
3. H. Hayashi, T. Ohiwa, H. Tamura, M. Matsushita, I. Hasegawa, K. Horioka and H. Okano: Proc. Dry Process Symp. 1992 (The Institute of Electrical Engineers of Japan, Tokyo, 1992) p. 205.
4. R. A. Gottscho and C. W. Jurgensen: J. Vac. Sci. &: Technol. B 10 (1992) 2133.
5. J. W. Coburn and H. F. Winters: Appl. Phys. Lett. 55 (1989) 2730.
6. E. S. G. Shaqfer and C. W. Jurgensen: J. Appl. Phys. 66 (1989) 4664.
7. K. P. Giapis, G. R. Scheller, R. A. Gottscho, W. S. Hobson and Y. H. Lee: Appl. Phys. Lett. 57 (1990) 983.
8. J. C. Arnold and H. H. Sawin: J. Appl. Phys. 70 (1991) 5314.
9. S. G. Ingram: J. Appl. Phys. 68 (1990) 500.
10. D. C. Gray, V. Mohindra and H. H. Sawin: J. Vac. Sci. & Technol. A 12 (1994) 354.
11. T. Ono, R. Hamasaki and T. Mizutani: Jpn. J. Appl. Phys. 33 (1994) L1717.
12. T. Fukasawa, K. Kubota, H. Shindo and Y. Horiike: Jpn. J. Appl. Phys. 33 (1994) 7042.
13. K. Kurihara, K. Horioka and H. Okano: Proc. Dry Process Symp. 1994 (The Institute of Electrical Engineers of Japan, Tokyo, 1994) p. 217.
14. H. Sugai and H. Toyoda: J. Vac. Sci. & Technol. A 10 (1992) 1193.
15. V. Tarnosky and K. Becker: J. Chem. Phys. 98 (1993) 7868.
16. Ce Ma, M. R. Bruce and R. A. Bonham: Phys. Rev. A 44 (1991) 2921.
17. K. Kurihara, J. Abe, H. Hayashi, M. Sekine and K. Horioka: Proc. IUVSTA Int. Workshop on Plasma Sources and Surface Interactions in Materials Processing, 1995 (International Union for Vacuum Science, Technique and Applications, Tokyo, 1995) p. 2.
18. K. Hashimoto, T. Ohtsuka, K. Kawaguti, M. Aoyama and D. Matsunaga: Proc. Dry Process Symp. 1993 (The Institute of Electrical Engineers of Japan, Tokyo, 1993) p. 33.