A fluorinated organic-silica film with extremely low dielectric constant

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2368-2372

  Uchida, Yasutaka ^a   Taguchi, Kohshi ^a   Sugahara, Satoshi ^b   Matsumura, Masakiyo ^b  

^a TEIKYO UNIVERSITY OF SCIENCE   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Alkyl silyl iso cyanates; Chemical vapor deposition; Dielectric constant; Fluorinated organic silica film; Inter metal insulator

Indexed keywords

EID: 0000183456     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2368     Document Type: Article

References (10)

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