Exploiting memory device wear-out dynamics to improve NAND flash memory system performance

Proceedings of FAST 2011: 9th USENIX Conference on File and Storage Technologies

Volumn , Issue , 2011, Pages 245-258

  Pan, Yangyang ^a   Dong, Guiqiang ^a   Zhang, Tong ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADAPTIVE SYSTEMS; DEFECTS; ERROR CORRECTION; MEMORY ARCHITECTURE; NAND CIRCUITS; RESPONSE TIME (COMPUTER SYSTEMS); WEAR OF MATERIALS;

CYCLING ENDURANCE; DEVICE RELIABILITY; ERROR CORRECTION CODES; FABRICATION TECHNOLOGIES; PERFORMANCE METRICS; QUANTITATIVE EVALUATION; RESPONSE TIME REDUCTIONS; STORAGE RELIABILITY;

FLASH MEMORY;

EID: 85077065281     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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