Scaling non-volatile memory below 30nm

2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, Proceedings, NVSMW

Volumn , Issue , 2007, Pages 5-10

  Prall, Kirk ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

30nm; Component; Floating gate elimination; Mechanical stress; Noise; Non volatile memory; Scaling; Variation

Indexed keywords

ELECTRIC CONDUCTIVITY; RELIABILITY; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR STORAGE;

FEATURE SIZES; FLOATING GATE (FG); FUTURE TRENDS; NON-VOLATILE; NON-VOLATILE MEMORIES (NVM); NON-VOLATILE MEMORY (NVM); SCALING CHALLENGES; SEMICONDUCTOR MEMORIES;

DATA STORAGE EQUIPMENT;

EID: 36448985162     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVSMW.2007.4290561     Document Type: Conference Paper

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