A 56-nm CMOS 99-mm 2 8-Gb multi-level NAND flash memory with 10-MB/s program throughput

IEEE Journal of Solid-State Circuits

Volumn 42, Issue 1, 2007, Pages 219-229

  Takeuchi, Ken ^a,b   Kameda, Yasushi ^b   Fujimura, Susumu ^b   Otake, Hiroyuki ^b   Hosono, Koji ^b   Shiga, Hitoshi ^b   Watanabe, Yoshihisa ^b   Futatsuyama, Takuya ^b   Shindo, Yoshihiko ^b   Kojima, Masatsugu ^b   Iwai, Makoto ^b   Shirakawa, Masanobu ^b   Ichige, Masayuki ^b   Hatakeyama, Kazuo ^b   Tanaka, Shinichi ^b   Kamei, Teruhiko ^c   Fu, Jia Yi ^c   Cernea, Adi ^c   Li, Yan ^c   Higashitani, Masaaki ^c   Hemink, Gertjan ^c   Sato, Shinji ^c   Oowada, Ken ^c   Lee, Shih Chung ^c   Hayashida, Naoki ^c   Wan, Jun ^c   Lutze, Jeffrey ^c   Tsao, Shouchang ^c   Mofidi, Mehrdad ^c   Sakurai, Kiyofumi ^b   Tokiwa, Naoya ^b   Waki, Hiroko ^b   Nozawa, Yasumitsu ^b   Kanazawa, Kazuhisa ^b   Ohshima, Shigeo ^b   more..

^a IEEE   (Japan)

^b TOSHIBA CORPORATION   (Japan)

^c SanDisk Corporation   (United States)

Author keywords

Flash memory; High speed programming; Multi level cell; NAND flash memory

Indexed keywords

HIGH SPEED PROGRAMMING; INTEGRATED SEMICONDUCTOR CHIPS; MULTI LEVEL CELL; NAND FLASH MEMORY;

DIGITAL CIRCUITS; MICROPROCESSOR CHIPS; THROUGHPUT; TRANSISTORS;

FLASH MEMORY;

EID: 33846216331     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2006.888299     Document Type: Article

References (8)

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