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Volumn 75, Issue 1, 2014, Pages 142-147

Solution processed amorphous InGaZnO semiconductor thin films and transistors

Author keywords

A. Amorphous materials; A. Semiconductors; A. Thin films; B. Sol gel growth; D. Electrical properties

Indexed keywords

ACTIVE CHANNEL LAYERS; AMORPHOUS-INDIUM GALLIUM ZINC OXIDES; ANNEALING TEMPERATURES; C. THIN FILM TRANSISTOR (TFT); SEMICONDUCTOR THIN FILMS; SOL-GEL GROWTH; SOLUTION-PROCESSED; SURFACE CONDITIONS;

EID: 84886719477     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2013.09.015     Document Type: Article
Times cited : (31)

References (29)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.