Effect of Ga content and sintering time on electrical properties of InGaZnO thin film transistors fabricated by solgel process

Journal of Crystal Growth

Volumn 326, Issue 1, 2011, Pages 175-178

  Choi, Jun Hyuk ^a   Hwang, Soo Min ^a   Lee, Chang Min ^a   Kim, Ji Cheol ^a   Park, Geun Chul ^a   Joo, Jinho ^a   Lim, Jun Hyung ^b  

^a Sungkyunkwan University   (South Korea)

^b Stanford University   (United States)

Author keywords

A1. X ray Photoelectron Spectroscopy (XPS); A3. Sol gel processes; B2. Oxide semiconducting materials; B3. Thin film transistor

Indexed keywords

A3. SOL-GEL PROCESSES; AMBIENT ATMOSPHERE; ATOMIC RATIO; B2. OXIDE SEMICONDUCTING MATERIALS; B3. THIN FILM TRANSISTOR; GA CONTENT; N-CHANNEL TRANSISTORS; OFF CURRENT; PRECURSOR SOLUTIONS; SATURATION MOBILITY; SINTERING TIME; SOL-GEL METHODS;

ATOMIC SPECTROSCOPY; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; OXYGEN VACANCIES; PHOTOELECTRON SPECTROSCOPY; SILICON COMPOUNDS; SOL-GEL PROCESS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

SINTERING;

EID: 79960180798     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.01.091     Document Type: Conference Paper

References (18)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono Nature 432 2004 488
2. D.H. Lee, Y.J. Chang, G.S. Herman, and C.H. Chang Adv. Mater. 19 2007 843
3. S.K. Park, Y.H. Kim, H.S. Kim, and J.I. Han Electrochem Solid-State Lett. 12 2009 H256
4. E. Fortunato, P. Barquinha, G. Gonçalves, L. Pereira, and R. Martins Solid-State Electron. 52 2008 443
5. T. Miyasako, M. Senoo, and E. Tokumitsu Appl. Phys. Lett. 86 2005 162902
6. K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono Jpn. J. Appl. Phys. 45 2006 4303
7. G.H. Kim, W.H. Jeong, and H.J. Kim Phys. Status Solidi A 7 2010 1677
8. J.H. Lim, J.H. Shim, J.H. Choi, J. Joo, K. Park, H. Jeon, M.R. Moon, H. Kim, and H.-J. Lee Appl. Phys. Lett. 95 2009 012108
9. E.M.C. Fortunato, P.M.C. Barquinha, A.C.M.B.G. Pimentel, A.M.F. Gonçalves, A.J.S. Marques, R.F.P. Martins, and L.M.N. Pereira Appl. Phys. Lett. 85 2004 2541
10. S. Masuda, K. Kitamura, Y. Okumura, S. Miyatake, H. Tabata, and T. Kawai J. Appl. Phys. 93 2003 1624
11. P.F. Carcia, R.S. McLean, and M.H. Reilly Appl. Phys. Lett. 88 2006 123509
12. J.C.C. Fan, and J.B. Goodenough J. Appl. Phys. 48 1997 3524
13. S. Major, S. Kumar, M. Bhatnagar, and K.L. Chopra Appl. Phys. Lett. 49 1986 394
14. T. Ishida, H. Kobayashi, and Y. Nakato J. Appl. Phys. 73 1993 4344
15. S. Jeong, Y. Ha, J. Moon, A. Facchetti, and T.J. Marks Adv. Mater. 22 2010 1346
16. H. Yang, Y.Q. Wang, H. Wang, and Q.X. Jia Appl. Phys. Lett. 96 2010 012909
17. D.R. Kammler, D.D. Edwards, B.J. Ingram, T.O. Mason, G.B. Palmer, A. Ambrosini, K.R. Poeppelmeier, J. Electrochem. Soc. 9911 (1999) 68
18. J.H. Choi, J.H. Shim, S.M. Hwang, J. Joo, K. Park, H. Kim, H.-J. Lee, J.H. Lim, M.R. Moon, D. Jung, J. Korean Phys. Soc. 57 (2010) 1836