Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture

ACS Applied Materials and Interfaces

Volumn 5, Issue 16, 2013, Pages 7983-7988

  Yu, Xinge ^a,b   Zhou, Nanjia ^b   Smith, Jeremy ^b   Lin, Hui ^a,b   Stallings, Katie ^b   Yu, Junsheng ^a   Marks, Tobin J ^b   Facchetti, Antonio ^b,c  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b NORTHWESTERN UNIVERSITY   (United States)

^c POLYERA CORPORATION   (United States)

Author keywords

bilayer structure; indium gallium oxide; indium oxide; thin film transistor (TFT)

Indexed keywords

BI-LAYER STRUCTURE; CHANNEL ARCHITECTURE; GALLIUM OXIDES; INDIUM OXIDE; LOW-TEMPERATURE COMBUSTION; METAL OXIDE THIN-FILM TRANSISTORS; OXIDE THIN-FILM TRANSISTORS; SEMICONDUCTING LAYER;

AMORPHOUS MATERIALS; ATOMIC FORCE MICROSCOPY; COMBUSTION; GALLIUM; PHOTOELECTRONS; THIN FILM TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

INDIUM;

GALLIUM; GALLIUM OXIDE; INDIUM; INDIUM OXIDE; ZINC OXIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM; INDIUM; MICROSCOPY, ATOMIC FORCE; MICROSCOPY, ELECTRON, TRANSMISSION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTORS; TRANSISTORS, ELECTRONIC; X-RAY DIFFRACTION; ZINC OXIDE;

EID: 84883295234     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am402065k     Document Type: Article

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