n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation

Solar Energy Materials and Solar Cells

Volumn 173, Issue , 2017, Pages 96-105

  Richter, Armin ^a   Benick, Jan ^a   Feldmann, Frank ^a,b   Fell, Andreas ^a   Hermle, Martin ^a   Glunz, Stefan W ^a,b  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b UNIVERSITY OF FREIBURG   (Germany)

Author keywords

Device simulation; Impurity recombination; Passivating contacts; Power loss analysis; Silicon solar cells

Indexed keywords

EFFICIENCY; PASSIVATION; SEMICONDUCTING SILICON; SILICON; SILICON WAFERS; SOLAR CELLS;

DEVICE SIMULATIONS; EFFICIENCY LIMITATIONS; FABRICATION PROCESS; POWER LOSS ANALYSIS; RECOMBINATION MECHANISMS; RESISTIVITY VARIATION; SHOCKLEY-READ-HALL RECOMBINATIONS; SOLAR CELL SIMULATION;

SILICON SOLAR CELLS;

EID: 85019552276     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2017.05.042     Document Type: Article

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