Large area tunnel oxide passivated rear contact n-type Si solar cells with 21.2% efficiency

Progress in Photovoltaics: Research and Applications

Volumn 24, Issue 6, 2016, Pages 830-835

  Tao, Yuguo ^a   Upadhyaya, Vijaykumar ^a   Chen, Chia Wei ^a   Payne, Adam ^b   Chang, Elizabeth Lori ^a   Upadhyaya, Ajay ^a   Rohatgi, Ajeet ^a,b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Suniva Inc   (United States)

Author keywords

large area; n type Cz wafer; passivated contact; room temperature; screen printed; tunnel oxide

Indexed keywords

EFFICIENCY; ION IMPLANTATION; OPEN CIRCUIT VOLTAGE; PASSIVATION; SILICON; SILICON WAFERS; SOLAR CELLS; ALUMINUM; BORON; NITRIC ACID; POLYCRYSTALLINE MATERIALS; POLYSILICON; RECONFIGURABLE HARDWARE;

BACK SURFACE FIELDS; CRYSTALLINE SI SOLAR CELLS; CZOCHRALSKI WAFERS; HIGH TEMPERATURE PROCESS; LARGE AREA; SATURATION CURRENT DENSITIES; SCREEN-PRINTED; TUNNEL OXIDES;

SILICON SOLAR CELLS;

EID: 84964267011     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2739     Document Type: Article

References (33)

1. th IEEE Photovoltaic Specialist Conference, Tampa, Florida, USA, 2013; pp. 96-99.
2. Masuko K, Shigematsu M, Hashiguchi T, Fujishima D, Kai M, Yoshimura N, Yamaguchi T, Ichihashi Y, Mishima T, Matsubara N, Yamanishi T, Takahama T, Taguchi M, Maruyama E, Okamoto S,. Achievement of more than 25% conversion efficiency with crystalline silicon heterojunction solar cell. IEEE Journal of Photovoltaics 2014; 4 (6): 1433-1435.
3. Feldmann F, Bivour M, Reichel C, Hermle M, Glunz SW,. Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics. Solar Energy Materials and Solar Cells 2014; 120: 270-274.
4. Heng JB, Fu J, Kong B, Chae Y, Wang W, Xie Z, Reddy A, Lam K, Beitel C, Liao C, Erben C, Huang Z, Xu Z,. >23% high-efficiency tunnel oxide junction bifacial solar cell with electroplated Cu gridlines. IEEE Journal of Photovoltaics 2015; 5 (1): 82-86.
5. Feldmann F, Bivour M, Reichel C, Steinkemper H, Hermle M, Glunz SW,. Tunnel oxide passivated contacts as an alternative to partial rear contacts. Solar Energy Materials and Solar Cells 2014; 131: 46-50.
6. Feldmann F, Simon M, Bivour M, Reichel C, Hermle M,. Efficient carrier-selective p- and n-contacts for Si solar cells. Solar Energy Materials and Solar Cells 2014; 131: 100-104.
7. Asuha HK, Maida O, Takahashi M, Iwasa H,. Nitric acid oxidation of Si to form ultrathin silicon dioxide layers with a low leakage current density. Journal of Applied Physics 2003; 94: 7328-7335.
8. Lee WC, Hu C,. Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction-and valence-band electron and hole tunneling. IEEE Transactions on Electron Devices 2001; 48 (7): 1366-1373.
9. Wolstenholme GR, Jorgensen N, Ashburn P, Booker GR,. An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observations. Journal of Applied Physics 1987; 61: 225-233.
10. nd IEEE Photovoltaic Specialists Conference, New Orleans, Louisiana, USA, 2015.
11. th IEEE Photovoltaic Specialists Conference, Washington D.C., USA, 1996; p. 457.
12. Shewchun J, Singh R, Green MA,. Theory of metal-insulator-semiconductor solar cells. Journal of Applied Physics 1977; 48: 765.
13. th IEEE Photovoltaic Specialist Conference, Denver, Colorado, USA, 2014; p. 3488-3452.
14. th IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, USA, 1985; pp. 578-583.
15. th European Photovoltaic Solar Energy Conference, Hamburg, Germany, 2011; p. 875.
16. Ryu K, Upadhyaya A, Song H, Choi C, Rohatgi A, Ok Y,. Chemical etching of boron-rich layer and its impact on high efficiency n-type silicon solar cells. Applied Physics Letters 2012; 101: 073902.
17. th IEEE Photovoltaic Specialists Conference, Denver, Colorado, USA, 2014; pp. 3654-3658.
18. Böscke TS, Kania D, Schöllhorn C, Stichtenoth D, Helbig A, Sadler P, Braun M, Dupke M, Weiß M, Grohe A, Lossen J, Krokoszinski H-J,. Fully ion implanted and coactivated industrial n-type cells with 20.5% efficiency. IEEE Journal of Photovoltaics 2014; 4 (1): 48-51.
19. th IEEE Photovoltaic Specialists Conference, Tempa, Florida, USA 2013; pp. 2247-2249.
20. x double heterostructure solar cell. Applied Physics Letters 1985; 47: 1211-1213.
21. Reusch M, Bivour M, Hermele M, Glunz SW,. Fill factor limitation of silicon heterojunction solar cells by junction recombination. Energy Procedia 2013; 38: 297-304.
22. 2 N-type Cz substrate. IEEE Journal of Photovoltaics 2014; 4 (1): 58-63.
23. Trupke T, Bardos RA, Schubert MC, Warta W,. Photoluminescence imaging of silicon wafers. Applied Physics Letters 2006; 89 (4): 044107.
24. Trupke T, Nyhus J, Haunschild J,. Luminescence imaging for inline characterisation in silicon photovoltaics. Physica Status Solidi (RRL) 2011; 5 (4): 131-137.
25. 3. Applied Physics Letters 2007; 91: 112107.
26. th IEEE Photovoltaic Specialists Conference, Philadelphia, Pennsylvania, USA, 2009; pp. 375-379.
27. Mäckel H, Varner K,. On the determination of the emitter saturation current density from lifetime measurements of silicon devices. Progress in Photovoltaics: Research and Applications 2013; 21 (5): 850-866.
28. Altermatt PP,. Models for numerical device simulations of crystalline silicon solar cells-a review. Journal of Computational Electronics 2011; 10 (3): 314-330.
29. Edler A, Mihailetchi VD, Koduvelikulathu LJ, Comparotto C, Kopecek R, Harney R,. Metallization-induced recombination losses of bifacial silicon solar cells. Progress in Photovoltaics: Research and Applications 2015; 23: 620-627.
30. th IEEE Photovoltaic Specialists Conference, Denver, Colorado, USA, 2014; pp. 2808-2812.
31. Tao Y, Payne A, Upadhyaya VD, Rohatgi A,. 20.7% efficient ion-implanted large area n-type front junction silicon solar cells with rear point contacts formed by laser opening and physical vapor deposition. Progress in Photovoltaics: Research and Applications 2014; 22 (10): 1030-1039.
32. th IEEE World Conference, Waikoloa, Hawaii, USA, Vol. 2, 2006; pp. 1315-1318.
33. Bivour M, Reichel C, Hermle M, Glunz SW,. Improving the a-Si:H(p) rear emitter contact of n-type silicon solar cells. Solar Energy Materials and Solar Cells 2012; 106: 11-16.