730 mV implied Voc enabled by tunnel oxide passivated contact with PECVD grown and crystallized n+ polycrystalline Si

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Volumn , Issue , 2015, Pages

  Tao, Yuguo ^a   Chang, Elizabeth Lori ^a   Upadhyaya, Ajay ^a   Roundaville, Brian ^a   Ok, Young Woo ^a   Madani, Keeya ^a   Chen, Chia Wei ^a   Tate, Keith ^a   Upadhyaya, Vijaykumar ^a   Zimbardi, Francesco ^a   Keane, James ^a   Payne, Adam ^b   Rohatgi, Ajeet ^a,b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Suniva Inc   (United States)

Author keywords

implied Voc; interface passivation; passivated contact; poly Si; tunnel oxide

Indexed keywords

DEPOSITION; EFFICIENCY; INTERFACES (MATERIALS); ION IMPLANTATION; PASSIVATION; POLYSILICON; SILICON; SILICON SOLAR CELLS; SILICON WAFERS;

ANNEALING TEMPERATURES; COMMERCIAL GRADE; HIGH DOSE ION-IMPLANTED; INTERFACE PASSIVATION; PECVD DEPOSITIONS; POLYCRYSTALLINE-SI; SYMMETRIC STRUCTURES; TUNNEL OXIDES;

POLYCRYSTALLINE MATERIALS;

EID: 84961589404     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2015.7356218     Document Type: Conference Paper

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