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Volumn 4, Issue 5, 1996, Pages 355-367

Numerical quantification and minimization of perimeter losses in high-efficiency silicon solar cells

Author keywords

[No Author keywords available]

Indexed keywords

PERIMETER LOSSES;

EID: 0030234602     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-159X(199609/10)4:5<355::AID-PIP145>3.0.CO;2-X     Document Type: Article
Times cited : (44)

References (12)
  • 1
    • 6244295872 scopus 로고
    • Perimeter recombination in planar solar cells
    • A. Lugue and I. Tobias, 'Perimeter recombination in planar solar cells', J. Appl. Phys., 73, 4042-4047, (1993).
    • (1993) J. Appl. Phys. , vol.73 , pp. 4042-4047
    • Lugue, A.1    Tobias, I.2
  • 3
    • 84990710842 scopus 로고
    • Decreased emitter sheet resistivity loss in high-efficiency silicon solar cells
    • A. G. Aberle, S. R. Wenham, M. A. Green and G. Heiser, 'Decreased emitter sheet resistivity loss in high-efficiency silicon solar cells', Progr. Photovolt., 2, 3-17 (1994).
    • (1994) Progr. Photovolt. , vol.2 , pp. 3-17
    • Aberle, A.G.1    Wenham, S.R.2    Green, M.A.3    Heiser, G.4
  • 4
    • 6244299610 scopus 로고
    • Combining 2D and 3D device simulation with circuit simulation for optimising high-efficiency silicon solar cells
    • Erlangen, Germany, Springer-Verlag, Vienna
    • G. Heiser, P. P. Altermatt and J. Litsios, 'Combining 2D and 3D device simulation with circuit simulation for optimising high-efficiency silicon solar cells', in Proc. 6th International Conference on Simulation of Semiconductor Devices and Processes, Erlangen, Germany, pp. 348-351, Springer-Verlag, Vienna, 1995.
    • (1995) Proc. 6th International Conference on Simulation of Semiconductor Devices and Processes , pp. 348-351
    • Heiser, G.1    Altermatt, P.P.2    Litsios, J.3
  • 5
    • 6244306755 scopus 로고
    • Simulation of large-area silicon solar cells
    • CAD ICAS
    • G. Heiser and P. P. Altermatt, 'Simulation of large-area silicon solar cells', submitted to IEEE Trans. CAD ICAS, (1995).
    • (1995) IEEE Trans.
    • Heiser, G.1    Altermatt, P.P.2
  • 8
    • 0042367989 scopus 로고
    • Improvements in silicon backside-contact solar cells for high-value one-sun application
    • Nice, France, H. J. Stephens and Associates, Bedford, UK
    • R. Sinton, P. Verlinden, R. Swanson, R. Crane, K. Wickham and J. Perkins, 'Improvements in silicon backside-contact solar cells for high-value one-sun application', in Proc. 13th European Photovoltaic Solar Energy Conference, Nice, France, pp. 1586-1589, H. J. Stephens and Associates, Bedford, UK, 1995.
    • (1995) Proc. 13th European Photovoltaic Solar Energy Conference , pp. 1586-1589
    • Sinton, R.1    Verlinden, P.2    Swanson, R.3    Crane, R.4    Wickham, K.5    Perkins, J.6
  • 9
    • 0029391717 scopus 로고
    • Recombination rate saturation mechanisms at oxidised surfaces of high-efficiency silicon solar cells
    • S. J. Robinson, S. R. Wenham, P. P. Altermatt, A. G. Aberle, G. Heiser and M. A. Green, 'Recombination rate saturation mechanisms at oxidised surfaces of high-efficiency silicon solar cells', J. Appl. Phys., 78, 4740-4754 (1995).
    • (1995) J. Appl. Phys. , vol.78 , pp. 4740-4754
    • Robinson, S.J.1    Wenham, S.R.2    Altermatt, P.P.3    Aberle, A.G.4    Heiser, G.5    Green, M.A.6
  • 11
    • 0028722942 scopus 로고
    • Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters
    • Waikoloa, HI, USA, IEEE, Piscataway, NJ
    • A. Cuevas, G. Giroult, Matlakowski, P. A. Basore, C. DuBois and R. R. King, 'Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters', in 1st World Conference on Photovoltaic Energy Conversion, Waikoloa, HI, USA, pp. 1446-1449, IEEE, Piscataway, NJ, 1994.
    • (1994) 1st World Conference on Photovoltaic Energy Conversion , pp. 1446-1449
    • Cuevas, A.1    Giroult, G.2    Matlakowski3    Basore, P.A.4    DuBois, C.5    King, R.R.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.