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Vienna, Austria, Springer-Verlag, Vienna
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G. Heiser, A. G. Aberle, S. R. Wenham and M. A. Green, 'Two-dimensional numerical simulations of high-efficiency silicon solar cells', in Proc. 5th International Conference on Simulation of Semiconductor Devices and Processes, Vienna, Austria, pp. 389-392, Springer-Verlag, Vienna, 1993.
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Decreased emitter sheet resistivity loss in high-efficiency silicon solar cells
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A. G. Aberle, S. R. Wenham, M. A. Green and G. Heiser, 'Decreased emitter sheet resistivity loss in high-efficiency silicon solar cells', Progr. Photovolt., 2, 3-17 (1994).
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Combining 2D and 3D device simulation with circuit simulation for optimising high-efficiency silicon solar cells
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Erlangen, Germany, Springer-Verlag, Vienna
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G. Heiser, P. P. Altermatt and J. Litsios, 'Combining 2D and 3D device simulation with circuit simulation for optimising high-efficiency silicon solar cells', in Proc. 6th International Conference on Simulation of Semiconductor Devices and Processes, Erlangen, Germany, pp. 348-351, Springer-Verlag, Vienna, 1995.
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Simulation of large-area silicon solar cells
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J. Zhao, A. Wang, P. P. Altermatt, S. R. Wenham and M. A. Green, '24% Efficient silicon solar cells', in 1st World Conference on Photovoltaic Energy Conversion, Waikoloa, HI, USA, pp. 1477-1480, IEEE, Piscataway, NJ, 1994.
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Nice, France, H. J. Stephens and Associates, Bedford, UK
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R. Sinton, P. Verlinden, R. Swanson, R. Crane, K. Wickham and J. Perkins, 'Improvements in silicon backside-contact solar cells for high-value one-sun application', in Proc. 13th European Photovoltaic Solar Energy Conference, Nice, France, pp. 1586-1589, H. J. Stephens and Associates, Bedford, UK, 1995.
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S. J. Robinson, S. R. Wenham, P. P. Altermatt, A. G. Aberle, G. Heiser and M. A. Green, 'Recombination rate saturation mechanisms at oxidised surfaces of high-efficiency silicon solar cells', J. Appl. Phys., 78, 4740-4754 (1995).
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P. P. Altermatt, G. Heiser, X. Dai, J. Jürgens, A. G. Aberle, S. J. Robinson, T. Young, S. S. Wenham and M. A. Green, 'Rear surface passivation of high-efficiency silicon solar cells using a floating junction', J. Appl. Phys. (1996).
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Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters
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Waikoloa, HI, USA, IEEE, Piscataway, NJ
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A. Cuevas, G. Giroult, Matlakowski, P. A. Basore, C. DuBois and R. R. King, 'Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters', in 1st World Conference on Photovoltaic Energy Conversion, Waikoloa, HI, USA, pp. 1446-1449, IEEE, Piscataway, NJ, 1994.
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