Carrier-diffusion corrected J0-analysis of charge carrier lifetime measurements for increased consistency

Solar Energy Materials and Solar Cells

Volumn 142, Issue , 2015, Pages 116-122

  Kimmerle, Achim ^a   Greulich, Johannes ^a   Wolf, Andreas ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Band gap narrowing; Dark saturation current; Lifetime; QSSPC; Silicon

Indexed keywords

CHARGE CARRIERS; CRYSTALLINE MATERIALS; DIFFUSION; ENERGY GAP; QUANTUM WELL LASERS; SILICON;

BAND GAP NARROWING; CRYSTALLINE SILICONS; DOPING TYPE AND LEVELS; LIFETIME; LIFETIME MEASUREMENTS; QSSPC; RECOMBINATION PARAMETERS; SATURATION CURRENT;

CARRIER LIFETIME;

EID: 84940453026     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2015.06.043     Document Type: Article

References (26)

1. R.A. Sinton, and A. Cuevas Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data Appl. Phys. Lett. 69 1996 2510 2512
2. D.E. Kane, R.M. Swanson, Measurement of the emitter saturation current by a contactless photoconductivity decay method (silicon solar cells), in: Proceedings of the 18th IEEE Photovoltaic Specialists Conference, Las Vegas, Nevada, USA, 1985, pp. 578-583.
3. H. Mäckel, and K. Varner On the determination of the emitter saturation current density from lifetime measurements of silicon devices Prog. Photovolt.: Res. Appl. 2012 1 17
4. B. Min, A. Dastgheib-Shirazi, P.P. Altermatt, H. Kurz, Accurate determination of the emitter saturation current density for industrial P-diffused emitters, in: Proceedings of the 29th European Photovoltaic Solar Energy Conference and Exhibition, Amsterdam, The Netherlands, 2014, pp. 463-466.
5. A. Thomson, N. Grant, K.F. Chern, and T. Kho Improved diffused-region recombination-current pre-factor analysis Energy Procedia 55 2014 141 148
6. A.L. Blum, J.S. Swirhun, R. Sinton, A. Kimmerle, An updated analysis to the WCT-120 QSSPC measurement system using advanced device physics, in: Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition, Paris, France, 2013, pp. 1521-1523.
7. 0 -analysis by QSSPC Energy Procedia 55 2014 101 106
8. A. Cuevas, M. Stocks, D. Macdonald, R. Sinton, Applications of the quasi-steady-state photoconductance technique, in: Proceedings of the 2nd World Conference on Photovoltaic Energy Conversion, Vienna, Austria, 1998.
9. J.R. Haynes, and W. Shockley The mobility and life of injected holes and electrons in germanium Phys. Rev. 81 1951 835 843
10. E.K. Banghart, and J.L. Gray Extension of the open-circuit voltage decay technique to include plasma-induced bandgap narrowing IEEE Trans. Electron Dev. 39 1992 1108 1114
11. A. Richter, S.W. Glunz, F. Werner, J. Schmidt, and A. Cuevas Improved quantitative description of Auger recombination in crystalline silicon Phys. Rev. B 86 2012 1 14
12. K.L. Luke, and L.-J. Cheng Analysis of the interaction of a laser pulse with a silicon wafer: determination of bulk lifetime and surface recombination velocity J. Appl. Phys. 61 1987 2282 2293
13. A.B. Sproul Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors J. Appl. Phys. 76 1994 2851 2854
14. A. Cuevas, and R.A. Sinton Prediction of the open-circuit voltage of solar cells from the steady-state photoconductance Prog. Photovolt.: Res. Appl. 5 1997 79 90
15. R.A. Sinton, H. Tathgar, S. Bowden, A. Cuevas, On the problem of determining the bulk lifetime of unpassivated silicon wafers, in: Proceedings of the 14th Workshop on Crystalline Silicon Solar Cells and Modules, Winter Park, Colorado, USA, 2004, pp. 1-4.
16. A. Schenk Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation J. Appl. Phys. 84 1998 3684 3695
17. D.B.M. Klaassen A unified mobility model for device simulation. I. Model equations and concentration dependence Solid-State Electron. 35 1992 953 959
18. D.B.M. Klaassen A unified mobility model for device simulation - II. Temperature dependence of carrier mobility and lifetime Solid-State Electron. 35 1992 961 967
19. F. Schindler, M.C. Schubert, A. Kimmerle, J. Broisch, S. Rein, W. Kwapil, and W. Warta Modeling majority carrier mobility in compensated crystalline silicon for solar cells Sol. Energy Mater. Sol. Cells 106 2012 31 36
20. D. Kane, R. Swanson, Electron-hole collisions in concentrator solar cells, in: Photovoltaic Specialists Conference, 1988, Conference Record of the Twentieth IEEE, IEEE, 1988, pp. 512-517.
21. J. Seiffe, L. Gautero, M. Hofmann, J. Rentsch, R. Preu, S. Weber, and R.A. Eichel Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride J. Appl. Phys. 109 2011 034105
22. A. Cuevas Modelling silicon characterisation Energy Procedia 8 2011 94 99
23. F. Schindler, M. Forster, J. Broisch, J. Schön, J. Giesecke, S. Rein, W. Warta, and M.C. Schubert Towards a unified low-field model for carrier mobilities in crystalline silicon Sol. Energy Mater. Sol. Cells 131 2014 92 99
24. S.S. Li, and W.R. Thurber The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon Solid-State Electron. 20 1977 609 616
25. H. Haug, A. Kimmerle, J. Greulich, A. Wolf, and E.S. Marstein Implementation of Fermi-Dirac statistics and advanced models in PC1D for precise simulations of silicon solar cells Sol. Energy Mater. Sol. Cells 131 2014 30 36
26. K.R. McIntosh, P.P. Altermatt, A freeware 1d emitter model for silicon solar cells, in: Proceedings of the 35th IEEE Photovoltaic Specialists Conference, Honolulu, Hawaii, USA, 2010, pp. 1-6.