Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics

Solar Energy Materials and Solar Cells

Volumn 120, Issue PART A, 2014, Pages 270-274

  Feldmann, Frank ^a   Bivour, Martin ^a   Reichel, Christian ^a   Hermle, Martin ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Fill factor; Interface passivation; Passivated contact; Polysilicon; Thermal stability; Tunnel oxide

Indexed keywords

CRYSTALLINE SILICON SOLAR CELLS; FILL FACTOR; INTERFACE PASSIVATION; MAXIMUM POWER POINT; METAL SEMICONDUCTOR INTERFACE; SURFACE RECOMBINATIONS; TRANSPORT CHARACTERISTICS; TUNNEL OXIDES;

EFFICIENCY; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; OPEN CIRCUIT VOLTAGE; POLYSILICON; SEMICONDUCTING SILICON; SILICON; SILICON OXIDES; SILICON SOLAR CELLS; THERMODYNAMIC STABILITY;

PASSIVATION;

EID: 84888385864     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.09.017     Document Type: Article

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