Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers

Solar Energy Materials and Solar Cells

Volumn 142, Issue , 2015, Pages 123-127

  Moldovan, Anamaria ^a   Feldmann, Frank ^a   Zimmer, Martin ^a   Rentsch, Jochen ^a   Benick, Jan ^a   Hermle, Martin ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Carrier selective contacts; Interface structure; Passivated contacts; TEM; Tunnel oxide; XPS

Indexed keywords

COST EFFECTIVENESS; EFFICIENCY; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; OXIDATION; OZONE; OZONE LAYER; PASSIVATION; SILICON OXIDES; SILICON SOLAR CELLS; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY;

ENABLING TECHNOLOGIES; HETEROJUNCTION SOLAR CELLS; HIGH CONVERSION EFFICIENCY; INTERFACE STRUCTURES; OXIDE LAYER THICKNESS; SELECTIVE CONTACTS; TUNNEL OXIDES; WET CHEMICAL OXIDATION;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84940463006     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2015.06.048     Document Type: Article

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