Junction Resistivity of Carrier-Selective Polysilicon on Oxide Junctions and Its Impact on Solar Cell Performance

IEEE Journal of Photovoltaics

Volumn 7, Issue 1, 2017, Pages 11-18

  Rienacker, Michael ^a,b   Bossmeyer, Marcel ^a   Merkle, Agnes ^a   Romer, Udo ^c   Haase, Felix ^a   Krugener, Jan ^a   Brendel, Rolf ^c   Peibst, Robby ^c  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Back junction back contact (BJBC) cells; contact resistivity; polysilicon; polysilicon on oxide (POLO) junctions; recombination; selective contacts; selectivity

Indexed keywords

EFFICIENCY; POLYCRYSTALLINE MATERIALS; POLYSILICON;

BACK CONTACT; HIGH QUALITY; NUMERICAL DEVICE SIMULATION; OXIDE JUNCTION; P-TYPE; SATURATION CURRENT DENSITIES; SOLAR CELL PERFORMANCE; TRANSFER LENGTH METHODS;

SOLAR CELLS;

EID: 84996605322     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2016.2614123     Document Type: Article

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