Modeling solar cells with the dopant-diffused layers treated as conductive boundaries

Progress in Photovoltaics: Research and Applications

Volumn 20, Issue 1, 2012, Pages 31-43

  Brendel, Rolf ^a,b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

diffused layers; finite element modeling; free energy; solar cells

Indexed keywords

BACK SURFACE FIELDS; DEVICE PERFORMANCE; DIFFUSED LAYERS; ELECTRONS AND HOLES; EMITTER-WRAP-THROUGH; FINITE ELEMENT MODELING; FINITE-ELEMENT; FULLY-COUPLED; PARTIAL DIFFERENTIAL; POWER CONVERSION EFFICIENCIES; SATURATION CURRENT DENSITIES; SEMICONDUCTOR EQUATIONS; SURFACE REGION; TWO-DIMENSIONAL SIMULATIONS;

CONVERSION EFFICIENCY; FREE ENERGY; LAPTOP COMPUTERS; PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTOR INSULATOR BOUNDARIES; SHEET RESISTANCE; SOLAR CELLS; TWO DIMENSIONAL;

SEMICONDUCTOR JUNCTIONS;

EID: 84855331023     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.954     Document Type: Article

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