Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions

Solar Energy Materials and Solar Cells

Volumn 131, Issue , 2014, Pages 85-91

  Römer, Udo ^a   Peibst, Robby ^a   Ohrdes, Tobias ^a   Lim, Bianca ^a   Krügener, Jan ^b   Bugiel, Eberhard ^b   Wietler, Tobias ^b   Brendel, Rolf ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Passivated contact; Passivation; Polysilicon; Silicon solar cell; Tunnel oxide

Indexed keywords

CONTACT RESISTANCE; OPEN CIRCUIT VOLTAGE; POLYSILICON; SILICON COMPOUNDS; SILICON SOLAR CELLS; TEXTURES;

DIFFERENT THICKNESS; ELECTRICAL CHARACTERISTIC; INTERFACIAL OXIDES; RECOMBINATION CURRENTS; SOLAR CELL STRUCTURES; SPECIFIC CONTACT RESISTANCES; THERMALLY GROWN OXIDE; TUNNEL OXIDES;

PASSIVATION;

EID: 84908401427     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2014.06.003     Document Type: Article

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