Self-Heating Measurement of 14-nm FinFET SOI Transistors Using 2-D Time-Resolved Emission

IEEE Transactions on Electron Devices

Volumn 63, Issue 5, 2016, Pages 2016-2022

  Stellari, Franco ^a   Jenkins, Keith A ^a   Weger, Alan J ^a   Linder, Barry P ^a   Song, Peilin ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

FinFET; picosecond imaging for circuit analysis (PICA); self heating; Silicon On Insulator; time resolved emission (TRE).

Indexed keywords

FINFET; TEMPERATURE MEASUREMENT;

DEVICE GEOMETRIES; OFF-STATE LEAKAGE CURRENT; OPERATING CONDITION; OPTICAL TECHNIQUE; PICOSECONDS; SELF-HEATING; TEMPERATURE DEPENDENT; TIME-RESOLVED EMISSIONS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 84977948926     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2016.2537054     Document Type: Article

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