Time-integrated photon emission as a function of temperature in 32 nm CMOS

IEEE International Reliability Physics Symposium Proceedings

Volumn 2015-May, Issue , 2015, Pages 2B41-2B47

  Shehata, Andrea Bahgat ^a   Weger, Alan J ^a   Stellari, Franco ^a   Song, Peilin ^a   Deslandes, Hervé ^b   Lundquist, Ted ^b   Ramsay, Euan ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b DCG SYSTEMS INC   (United States)

Author keywords

failure analysis; Photon Emission Microscopy (PEM); Superconducting Nanowire Single Photon Detector (SNSPD); Time Resolved Emission (TRE)

Indexed keywords

CAMERAS; CMOS INTEGRATED CIRCUITS; FAILURE ANALYSIS; INFRARED DEVICES; PARTICLE BEAMS;

CHIP OPERATING TEMPERATURES; LEAKAGE COMPONENTS; NEAR INFRARED CAMERAS; PHOTON EMISSION MICROSCOPY; SPECTRAL TAILORING; SUPERCONDUCTING NANOWIRE SINGLE PHOTON DETECTORS; SWITCHING SIGNALS; TIME-RESOLVED EMISSIONS;

PHOTONS;

EID: 84942918759     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2015.7112675     Document Type: Conference Paper

References (11)

1. F. Stellari, P. Song, J. C. Tsang, M. K. McManus, and M. B. Ketchen, "Testing and diagnostics of CMOS circuits using Light Emission from Off-State Leakage Current", IEEE Trans. on Electron Dev., vol. 51, no. 9, 2004, pp. 1455-1462.
2. S. Polonsky, M. Bhushan, A. Weger, and P. Song, "Photon emission microscopy of inter/intra chip device performance variations", ESREF, 2005, pp. 1471-1475.
3. S. Rusu et al., "Backside infrared probing for static voltage drop and dynamic timing measurements", ISSCC, 2001, pp. 276-277.
4. P. Song et al., "MARVEL-Malicious Alteration Recognitionn and Verification by Emission of Light", HOST, 2011, pp. 117-121.
5. J. C. Tsang and J. A. Kash, "Picosecond hot electron light emission from submicron complementary metal-oxide-semiconductor circuits", Applied Physics Letters, 70, 1997, pp. 889-891.
6. S. Seidel, V. R. Rao, A. N. Zaplatin, and F. J. Low, "Application of infrared emission microscope for flip-chip (C4) failure analysis", ISTFA, 1999, pp. 471-476.
7. H. Deslandes and T. R. Lundquist, "Limitations to photon-emission microscopy when applied to "hot" devices", ESREF, 2003, pp. 1645-1650.
8. A. Bahgat Shehata et al., "Novel NIR camera with extended sensitivity and low noise for photon emission microscopy of VLSI circuits", ISTFA, 2014, pp. 6-11.
9. A. Bahgat Shehata et al., "Ultra-low voltage Time-Resolved Emission measurements from 32 nm SOI CMOS integrated circuits", ISTFA, 2014, pp. 415-421.
10. A. Bahgat Shehata, F. Stellari, A. Weger, and P. Song, "Modeling of transient and static components of intrinsic emission from VLSI circuits", IRPS, 2014, pp. 4A. 1. 1-4A. 1. 7.
11. U. Kindereit et al., "Near-infrared photon emission spectroscopy trends in scaled SOI technologies", ISTFA, 2012, pp. 128-134.