Characteristics of SOI FET's under pulsed conditions

IEEE Transactions on Electron Devices

Volumn 44, Issue 11, 1997, Pages 1923-1930

  Jenkins, Keith A ^a,b   Sun, J Y C ^a,b   Gautier, J ^c  

^a IEEE   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS;

SINGLE SHOT PULSE MEASUREMENTS;

FIELD EFFECT TRANSISTORS;

EID: 0031271096     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.641362     Document Type: Article

References (16)

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