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Applied Physics Letters

Volumn 108, Issue 23, 2016, Pages

Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures

(2) Guo, Yuzheng a Robertson, John a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT; ELECTRON AFFINITY; HETEROJUNCTIONS;

BAND ALIGNMENTS; BAND ENGINEERING; CHARGE NEUTRALITY LEVEL; CHEMICAL TREND; ELECTRON AFFINITY RULES; STRINGENT TEST; SUPERCELL CALCULATIONS; TRANSITION METAL DICHALCOGENIDES;

TRANSITION METALS;

EID: 84974627406 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4953169 Document Type: Article

Times cited : (188)

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