Epitaxial ZrSe2/MoSe2 semiconductor v.d. Waals heterostructures on wide band gap AlN substrates

Microelectronic Engineering

Volumn 147, Issue , 2015, Pages 269-272

  Tsipas, P ^a   Tsoutsou, D ^a   Marquez Velasco, J ^a   Aretouli, K E ^a   Xenogiannopoulou, E ^a   Vassalou, E ^a   Kordas, G ^a   Dimoulas, A ^a  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

2D semiconductors; Band alignment; Band structure; MBE; ZrSe2 films; ZrSe2 MoSe2 heterostructures

Indexed keywords

ALIGNMENT; ALUMINUM NITRIDE; BAND STRUCTURE; CALCULATIONS; ENERGY GAP; HETEROJUNCTIONS; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTONS; SELENIUM COMPOUNDS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS; ZIRCONIUM COMPOUNDS;

ALN SUBSTRATES; ANGLE RESOLVED PHOTOELECTRON SPECTROSCOPY; BAND ALIGNMENTS; FIRST-PRINCIPLES CALCULATION; HIGH QUALITY; P-N JUNCTION; VERTICAL TUNNELING; WIDE BAND GAP;

NITROGEN COMPOUNDS;

EID: 84928883094     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2015.04.113     Document Type: Article

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