Determination of band alignment in the single-layer MoS2 WSe2 heterojunction

Nature Communications

Volumn 6, Issue , 2015, Pages

  Chiu, Ming Hui ^a   Zhang, Chendong ^b   Shiu, Hung Wei ^c   Chuu, Chih Piao ^a   Chen, Chang Hsiao ^a   Chang, Chih Yuan S ^a   Chen, Chia Hao ^c   Chou, Mei Yin ^a,d,e   Shih, Chih Kang ^b   Li, Lain Jong ^a,f  

^a INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^e NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^f KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

MOLYBDENUM; MOLYBDENUM DISULFIDE; SELENIDE; SULFIDE; TUNGSTEN DERIVATIVE; TUNGSTEN DISELENIDE; UNCLASSIFIED DRUG;

EXPERIMENTAL STUDY; SCANNING TUNNELLING MICROSCOPY; TRANSITION ELEMENT; TWO-DIMENSIONAL MODELING; X-RAY SPECTROSCOPY;

ARTICLE; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84937598295     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms8666     Document Type: Article

References (33)

1. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147-150 (2011).
2. Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271-1275 (2010).
3. Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: a new direct gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010); 136805.
4. Wu, S. F. et al. Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2. Nat. Phys. 9, 149-153 (2013).
5. Xiao, D., Liu, G. B., Feng, W. X., Xu, X. D. & Yao, W. Coupled spin and valley physics in monolayers of MoS2 and other Group-VI dichalcogenides. Phys. Rev. Lett. 108, 196802 (2012).
6. Rivera, P. et al. Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures. Nat. Commun. 6, 6242 (2015).
7. Tongay, S. et al. Tuning interlayer coupling in large-area heterostructures with CVD-grown MoS2 and WS2 Monolayers. Nano Lett. 14, 3185-3190 (2014).
8. Lee, C.-H. et al. Atomically thin p-n junctions with van der Waals heterointerfaces. Nat. Nanotechnol. 9, 676-681 (2014).
9. Cheng, R. et al. Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes. Nano Lett. 14, 5590-5597 (2014).
10. Hong, X. P. et al. Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures. Nat. Nanotechnol. 9, 682-686 (2014).
11. Fang, H. et al. Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides. Proc. Natl Acad. Sci. USA 111, 6198-6202 (2014).
12. Britnell, L. et al. Strong light-matter interactions in heterostructures of atomically thin films. Science 340, 1311-1314 (2013).
13. Withers, F. et al. Light-emitting diodes by band-structure engineering in van der Waals heterostructures. Nat. Mater. 14, 301-306 (2015).
14. Franciosi, A. & Van de Walle, C. G. Heterojunction band offset engineering. Surf. Sci. Rep. 25, 1-140 (1996).
15. Bratina, G., Sorba, L., Antonini, A., Biasiol, G. & Franciosi, A. AlAs-GaAs heterojunction engineering by means of Group-IV elemental interface layers. Phys. Rev. B 45, 4528-4531 (1992).
16. Kowalczyk, S. P., Cheung, J. T., Kraut, E. A. & Grant, R. W. CdTe-HgTe (111) heterojunction valence-band discontinuity: a common-anion-rule contradiction. Phys. Rev. Lett. 56, 1605-1608 (1986).
17. Shih, C. K. & Spicer, W. E. Determination of a natural valence-band offset: the case of HgTe-CdTe. Phys. Rev. Lett. 58, 2594-2597 (1987).
18. Cong, C. X. et al. Synthesis and optical properties of large-area single crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition. Adv. Opt. Mater. 2, 131-136 (2014).
19. Huang, J. K. et al. Large-area synthesis of highly crystalline WSe2 mono layers and device applications. ACS Nano 8, 923-930 (2014).
20. Lee, Y. H. et al. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv. Mater. 24, 2320-2325 (2012).
21. Jin, W. C. et al. Direct measurement of the thickness-dependent electronic band structure of MoS2 using angle-resolved photoemission spectroscopy. Phys. Rev. Lett. 111, 106801 (2013).
22. Tonndorf, P. et al. Photoluminescence emission and Raman response of monolayer MoS2, MoSe2 and WSe2. Opt. Express 21, 4908-4916 (2013).
23. Zhang, C. D., Johnson, A., Hsu, C. L., Li, L. J. & Shih, C. K. Direct imaging of the band profile in single layer MoS2 on graphite: quasiparticle energy gap, metallic edge states and edge band bending. Nano Lett. 14, 2443-2447 (2014).
24. Zhang, C. D. et al.Probing critical point energies of transition metal dichalcogenides: surprising indirect gap of single layer WSe2. Preprint at http://arxiv.org/abs/1412.8487 (2014).
25. van der Zande, A. M. et al. Tailoring the electronic structure in bilayer molybdenum disulfide via interlayer twist. Nano Lett. 14, 3869-3875 (2014).
26. Lebegue, S. & Eriksson, O. Electronic structure of two-dimensional crystals from ab initio theory. Phys. Rev. B 79, 115409 (2009).
27. Chiou, J. W. X-rays in nanoscience: spectroscopy, spectromicroscopy, and scattering techniques Ch. 4 (Weinheim : Wiley-VCH, 2010).
28. Shiu, H. W. et al. Graphene as tunable transparent electrode material on GaN: layer-number-dependent optical and electrical properties. Appl. Phys. Lett. 103, 081604 (2013).
29. Kresse, G. & Furthmuller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comp. Mater. Sci. 6, 15-50 (1996).
30. Kresse, G. & Furthmuller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15-50 (1996).
31. Blochl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953-17979 (1994).
32. Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865-3868 (1996).
33. Klimes, J., Bowler, D. R. & Michaelides, A. Van der Waals density functionals applied to solids. Phys. Rev. B 83, 195131 (2011).