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Solid State Communications

Volumn 203, Issue , 2015, Pages 16-20

Measurement of high exciton binding energy in the monolayer transition-metal dichalcogenides WS2 and WSe2

(5) Hanbicki, A T a Currie, M b Kioseoglou, G a Friedman, A L a Jonker, B T a

a NAVAL RESEARCH LABORATORY (United States)

b UNIVERSITY OF CRETE (Greece)

Author keywords

A. 2D monolayers; A. Transition metal dichalcogenides; D. Exciton binding energy

Indexed keywords

ENERGY GAP; EXCITED STATES; EXCITONS; MONOLAYERS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM WELLS; TRANSITION METALS;

DICHALCOGENIDES; DIRECT-GAP SEMICONDUCTOR; EMERGING APPLICATIONS; EXCITON-BINDING ENERGY; EXPERIMENTAL DETERMINATION; FUNDAMENTAL PROPERTIES; OPTICAL REFLECTIVITY; SPATIAL CORRELATIONS;

BINDING ENERGY;

EID: 84949115354 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2014.11.005 Document Type: Article

Times cited : (312)

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