Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

ACS Nano

Volumn 10, Issue 4, 2016, Pages 4219-4227

  Boland, Jessica L ^a   Casadei, Alberto ^b   Tütüncüoglu, Gözde ^b   Matteini, Federico ^b   Davies, Christopher L ^a   Jabeen, Fauzia ^b   Joyce, Hannah J ^c   Herz, Laura M ^a   Fontcuberta i Morral, Anna ^b   Johnston, Michael B ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b EPFL   (Switzerland)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

carrier lifetime; GaAs; mobility; n type doping; nanowires; p type doping; photoconductivity; surface recombination; surface states; terahertz spectroscopy

Indexed keywords

CARRIER LIFETIME; CARRIER MOBILITY; DOPING (ADDITIVES); GALLIUM ARSENIDE; OPTOELECTRONIC DEVICES; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM; SURFACE STATES; TERAHERTZ SPECTROSCOPY;

GAAS; N- AND P-TYPE DOPING; N-TYPE AND P-TYPE DOPING; N-TYPE DOPING; NANOWIRE DEVICES; NONCONTACT METHODS; P-TYPE DOPING; SURFACE RECOMBINATIONS;

NANOWIRES;

EID: 84968866701     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b07579     Document Type: Article

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