P-Doping mechanisms in catalyst-free gallium arsenide nanowires

Nano Letters

Volumn 10, Issue 5, 2010, Pages 1734-1740

  Dufouleur, Joseph ^a   Colombo, Carlo ^b   Garma, Tonko ^a,b   Ketterer, Bernt ^b   Uccelli, Emanuele ^a,b   Nicotra, Marco ^b   Fontcuberta I Morral, Anna ^a,b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b EPFL   (Switzerland)

Author keywords

Catalyst free; Doping mechanisms; Electronic transport; Nanowire; Raman spectroscopy

Indexed keywords

ADVANCED APPLICATIONS; CATALYST-FREE; COMPETING MECHANISMS; DOPANT CONCENTRATIONS; DOPANT INCORPORATION; DOPING MECHANISM; ELECTRICAL MEASUREMENT; ELECTRONIC TRANSPORT; FOUR-POINT; GAAS; MESOSCOPIC PHYSICS; P-DOPING; SPATIAL DEPENDENCE;

CATALYSTS; CRYSTAL GROWTH; ELECTRIC WIRE; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING;

GALLIUM ARSENIDE;

GALLIUM; GALLIUM ARSENIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE;

ARTICLE; CATALYSIS; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PLASMON RESONANCE; SURFACE PROPERTY; ULTRASTRUCTURE;

ARSENICALS; CATALYSIS; CRYSTALLIZATION; GALLIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTORS; SURFACE PLASMON RESONANCE; SURFACE PROPERTIES;

EID: 77952415272     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl100157w     Document Type: Article

References (63)

1. Wang, W. U.; Chen, C.; Lin, K. H.; Fang, Y.; Lieber, C. M. Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 3208
2. Zheng, G. F.; Patolsky, F.; Cui, Y.; Wang, W. U.; Lieber, C. M. Nat. Biotechnol. 2005, 23, 1294
3. Cui, Y.; Lieber, C. M. Science 2001, 291, 851
4. Duan, X. F.; Huang, Y.; Cui, Y.; Wang, J. F.; Lieber, C. M. Nature 2001, 409, 66
5. Tans, S. J.; Dekker, A. R. M. Nature 1998, 393, 49
6. Cui, Y.; Zhong, Z. H.; Wang, D. L.; Wang, W. U.; Lieber, C. M. Nano Lett 2003, 3, 149
7. Chan, C. K.; Peng, H. L.; Liu, G.; McIlwrath, K.; Zhang, X. F.; Huggins, R. A.; Cui, Y. Nature Nanotechnol. 2008, 3, 31
8. Chan, C. K.; Zhang, X. F.; Cui, Y. Nano Lett. 2008, 8, 307
9. Kayes, B. M.; Atwater, H. A.; Lewis, N. S. J. Appl. Phys. 2005, 97, 114302
10. Tian, B. Z.; Zheng, X. L.; Kempa, T. J.; Fang, Y.; Yu, N. F.; Yu, G. H.; Huang, J. L.; Lieber, C. M. Nature 2007, 449, 885
11. Hochbaum, A. I.; Chen, R. K.; Delgado, R. D.; Liang, W. J.; Garnett, E. C.; Najarian, M.; Majumdar, A.; Yang, P. D. Nature 2008, 451, 163
12. Boukai, A. I.; Bunimovich, Y.; Tahir-Kheli, J.; Yu, J. K.; Goddard, W. A.; Heath, J. R. Nature 2008, 451, 168
13. Doh, Y. J.; van Dam, J. A.; Roest, A. L.; Bakkers, E. P. A. M.; Kouwenhoven, L. P.; De Franceschi, S. Science 2005, 309, 272
14. Thelander, C.; Martensson, T.; Bjork, M. T.; Ohlsson, B. J.; Larsson, M. W.; Wallenberg, L. R.; Samuelson, L. Appl. Phys. Lett. 2003, 83, 2052
15. Pfund, A.; Shorubalko, I.; Ensslin, K.; Leturcq, R. Phys. Rev. Lett. 2007, 99 036801
16. van Weert, M. H. M.; Akopian, N.; Perinetti, U.; van Kouwen, M. P.; Algra, R. E.; Veheijen, M. A.; Bakkers, E. P. A. M.; Kouwenhoven, L. P.; Zwiller, V. Nano Lett. 2009, 9, 1989
17. Ruppert, C.; Thunich, S.; Abstreiter, G.; Fontcuberta i Morral, A.; Holleitner, A. W.; Betz, M. Nano Lett. 2010, DOI: 10.1021/nl1004898
18. Kastner, M. A. Rev. Mod. Phys. 1992, 64, 849
19. Kroemer, H. Rev. Mod. Phys. 2001, 73, 783
20. Zutic, I.; Fabian, J.; Das Sarma, S. Rev. Mod. Phys. 2004, 76, 323
21. Wanwees, B. J.; Vanhouten, H.; Beenakker, C. W. J.; Williamson, J. G.; Kouwenhoven, L. P.; Vandermarel, D.; Foxon, C. T. Phys. Rev. Lett. 1988, 60, 848
22. Heiblum, M.; Nathan, M. I.; Thomas, D. C.; Knoedler, C. M. Phys. Rev. Lett. 1985, 55, 2200
23. Schedelbeck, G.; Wegscheider, W.; Bichler, M.; Abstreiter, G. Science 1997, 278, 5344
24. Fontcuberta i Morral, A.; Spirkoska, D.; Arbiol, J.; Heigoldt, M.; Morante, J. R.; Abstreiter, G. Small 2008, 4, 899
25. Heigoldt, M.; Arbiol, J.; Spirkoska, D.; Rebled, J. M.; Conesa-Boj, S.; Abstreiter, G.; Peiró, F.; Morante, J. R.; Fontcuberta i Morral, A. J. Mater. Chem. 2009, 19, 840
26. Spirkoska, D.; Colombo, C.; Heiâ, M.; Abstreiter, G.; Fontcuberta i Morral, A. J. Phys.: Condens. Matter 2008, 20, 454225
27. Gerardot, B. D.; Brunner, D.; Dalgarno, P. A.; Ohlberg, P.; Seidl, S.; Kroner, M.; Karrai, K.; Stoltz, N. G.; Petroff, P. M.; Warburton, R. J. Nature 2008, 451, 441
28. Komijani, Y.; Csontos, M.; Ihn, T.; Ensslin, K.; Reuter, D.; Wieck, A. D. Eur. Phys. Lett. 2008, 84, 57004
29. Bjork, M. T.; Thelander, C.; Hansen, A. E.; Jensen, L. E.; Larsson, M. W.; Wallenberg, L. R.; Samuelson, L. Nano Lett. 2004, 4, 1621
30. Jiang, X. C.; Xiong, Q. H.; Nam, S.; Qian, F.; Li, Y.; Lieber, C. M. Nano Lett. 2007, 7, 3214
31. Dayeh, S. A.; Aplin, D. P. R.; Zhou, X. T.; Yu, P. K. L.; Yu, E. T.; Wang, D. L. Small 2007, 3, 326
32. Richter, T.; Luth, H.; Schapers, T.; Meijers, R.; Jeganathan, K.; Hernandez, S. E.; Calarco, R.; Marso, M. Nanotechnology 2009, 20, 405206
33. Frielinghaus, R.; Hernandez, S. E.; Calarco, R.; Schapers, T. Appl. Phys. Lett. 2009, 94, 252107
34. Lauhon, L. J.; Gudiksen, M. S.; Wang, C. L.; Lieber, C. M. Nature 2002, 420, 57
35. Cui, Y.; Duan, X.; Hu, J.; Lieber, C. M. J. Phys. Chem. B 2000, 104, 5213
36. Cui, Y.; Lieber, C. M. Science 2001, 291, 851
37. Allen, J. E.; Perea, D. E.; Hemesath, E. R.; Lauhon, L. J. Adv. Mater. 2009, 21, 3067
38. Perea, D. E.; Hemesath, E. R.; Schwalbach, E. J.; Lensch-Falk, J. L.; Voorhees, P. W.; Lauhon, L. J. Nat. Nanotechnol. 2009, 4, 315
39. Garnett, E. C.; Tseng, Y.-C.; Khanal, D. R.; Wu, J.; Bokor, J.; Yang, P. Nat. Nanotechnol. 2009, 4, 311
40. Radovanovic, P. V.; Barrelet, C. J.; Gradecak, S.; Qian, F.; Lieber, C. M. Nano Lett. 2005, 5, 1407
41. Gutsche, C.; Regolin, I.; Blekker, K.; Lysov, A.; Prost, W.; Tegude, F. J. J. Appl. Phys. 2009, 105 024305
42. Spitzer, W. G.; Panishi, M. B. J. Appl. Phys. 1969, 40, 4200
43. Domke, C.; Ebert, P.; Heinrich, M.; Urban, K. Phys. Rev. B 1996, 54, 10288
44. Tsao, J. Y. Materials Fundamentals of Molecular Beam Epitaxy; Academic Press Inc.: San Diego, CA, 1993.
45. Stringfellow, G. B. Organometallic Vapor-Phase Epitaxy: Theory and Practice; Academic Press Inc.: San Diego, CA, 1999.
46. Colombo, C.; Spirkoska, D.; Frimmer, M.; Abstreiter, G.; Fontcuberta i Morral, A. Phys. Rev. B 2008, 77, 155326
47. Colombo, C.; Heiss, M.; Graetzel, M.; Fontcuberta i Morral, A. Appl. Phys. Lett. 2009, 94, 173108
48. To ensure that the silicon flux did not have any perturbation in the nucleation of the nanowires, the silicon shutter was opened 15 min after the start of the deposition process, which effectively corresponds to 10 minutes of growth, as the incubation time is approximately 5 min.
49. Grundmann, M. Introduction to semiconductors; Springer Verlag: Berlin, 2007.
50. Newman, R. C. Semicond. Sci. Technol. 1994, 9, 1749
51. Spirkoska, D.; Arbiol, J.; Gustafsson, A.; Conesa-Boj, S.; Zardo, I.; Heigoldt, M.; Gass, M. H.; Bleloch, A. L.; Estrade, S.; Peiro, F.; Morante, J. R.; Abstreiter, G.; Samuelson, L.; Fontcuberta i Morral, A. Phys. Rev. B 2009, 80, 245325
52. Zardo, I.; Conesa-Boj, S.; Peiro, F.; Morante, J. R.; Arbiol, J.; Uccelli, E.; Abstreiter, G.; Fontcuberta I Morral, A. Phys. Rev. B 2009, 80, 245324
53. Yu, J.-Y,; Chung, S.-W.; Heath, J. R. J. Phys. Chem. B 2000, 104, 11864
54. A sequence consisting in Pd/Ti/Au (40/10/280 nm) also worked well for the obtaining of ohmic contacts.
55. Sze, S. M. Physics of Semiconductor Devices, 2 nd ed.; Wiley: New York, 1981.
56. Ashwin, M. J.; Fahy, M. R.; Newman, R. C.; Wagner, J.; Robbie, D. A.; Sangster, M. J. L.; Silier, I.; Bauser, E.; Braun, W.; Ploog, K. J. Appl. Phys. 1994, 76, 7839
57. Aspnes, D. E.; Studna, A. A. Phys. Rev. B 1983, 27, 997
58. One should note that a saturation of the Si(LVM) signal is not observed, even if the shell reaches a maximum of 50 nm at the base of the nanowire. There are mainly two reasons that account for this: (1) The Raman measurements are realized between the two contacts, which means that we cannot measure at the exact base of the nanowire (where the shell would be 50 nm), but always at a distance of at least 2 microns. (2) The probe depth is defined as the distance d at which the light intensity is reduced a factore with respect to the incident intensity. This means that the light intensity is strongly reduced but still some scattering is expected at a depth of 50 nm.
59. Rosztoczy, F. E.; Wolfstirn, K. B. J. Appl. Phys. 1971, 42, 426
60. Massalki, T. B. Binary Alloy Phase Diagrams, 2 nd ed.; ASM International: Materials Park, OH, 1990.
61. In this equation we neglect the incorporation of silicon by diffusion through the nanowire walls and the desorption of silicon from the droplet, silicon has an extremely low pressure in these conditions.
62. Moss, S. J.; Ledwith, A. Chemistry of the Semiconductor Industry; Chapman and Hall: New York, 1997.
63. Ahn, B. H.; Shurtz, R. R.; Trussell, C. W. J. Appl. Phys. 1971, 42, 4512