Incorporation of the dopants Si and Be into GaAs nanowires

Applied Physics Letters

Volumn 96, Issue 19, 2010, Pages

  Hilse, M ^a   Ramsteiner, M ^a   Breuer, S ^a   Geelhaar, L ^a   Riechert, H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT ATOMS; DOPING CONCENTRATION; GAAS; INTERSTITIAL SITES; LOCAL VIBRATIONAL MODE; RESONANT RAMAN SCATTERING; SI-DOPING;

CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING;

SILICON;

EID: 77952970922     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3428358     Document Type: Article

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