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Applied Physics Letters

Volumn 94, Issue 17, 2009, Pages

Gallium arsenide p-i-n radial structures for photovoltaic applications

(4) Colombo, C a Heiss M a Gratzel M a Fontcuberta I Morral, A a

a EPFL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION PEAKS; GALLIUM ARSENIDES; ILLUMINATION CONDITIONS; P-I-N JUNCTIONS; PHOTOCURRENT MEASUREMENTS; PHOTOVOLTAIC APPLICATIONS; RADIAL STRUCTURES; SINGLE NANOWIRES; SPATIALLY RESOLVED; TOTAL EFFICIENCIES;

ARSENIC COMPOUNDS; CRYSTAL GROWTH; ELECTRIC WIRE; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOWIRES; SEMICONDUCTING GALLIUM;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 65449137575 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3125435 Document Type: Article

Times cited : (280)

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