Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy

Nanotechnology

Volumn 24, Issue 21, 2013, Pages

  Joyce, Hannah J ^a   Docherty, Callum J ^a   Gao, Qiang ^b   Tan, H Hoe ^b   Jagadish, Chennupati ^b   Lloyd Hughes, James ^a   Herz, Laura M ^a   Johnston, Michael B ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; ELECTRONIC PROPERTIES; GALLIUM ARSENIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM ARSENIDE; INDIUM PHOSPHIDE; NANOWIRES; OPTICAL PUMPING; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACE PLASMONS; TERAHERTZ SPECTROSCOPY; VELOCITY;

CHARGE CARRIER DYNAMICS; COMPARATIVE STUDIES; DEVICE APPLICATION; GAAS NANOWIRES; NANOWIRE MATERIALS; OPTICAL-PUMP TERAHERTZ-PROBE SPECTROSCOPY; SURFACE PLASMON MODES; SURFACE RECOMBINATION VELOCITIES;

III-V SEMICONDUCTORS;

GALLIUM; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; INDIUM PHOSPHIDE; NANOWIRE; ORGANOARSENIC DERIVATIVE; PHOSPHINE DERIVATIVE;

ARTICLE; CHEMISTRY; COMPARATIVE STUDY; ELECTRIC CONDUCTIVITY; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; RADIATION DOSE; RADIATION EXPOSURE; SEMICONDUCTOR; TERAHERTZ RADIATION; TERAHERTZ SPECTROSCOPY; ULTRASTRUCTURE;

ARSENICALS; ELECTRIC CONDUCTIVITY; GALLIUM; INDIUM; MATERIALS TESTING; NANOWIRES; PARTICLE SIZE; PHOSPHINES; RADIATION DOSAGE; SEMICONDUCTORS; TERAHERTZ RADIATION; TERAHERTZ SPECTROSCOPY;

EID: 84876905252     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/21/214006     Document Type: Article

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