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Applied Physics Letters

Volumn 97, Issue 22, 2010, Pages

Compensation mechanism in silicon-doped gallium arsenide nanowires

(4) Ketterer, B a Mikheev, E a Uccelli, E a,b Fontcuberta I Morral, A a,b

a EPFL (Switzerland)

b WALTER SCHOTTKY INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED DEFECTS; COMPENSATION MECHANISM; COMPOUND SEMICONDUCTORS; ELECTRICAL DEACTIVATION; LOCAL VIBRATIONAL MODE; P-TYPE; SI CONCENTRATION; SILICON CONCENTRATION; SILICON DOPING;

ARSENIC; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC WIRE; GALLIUM ALLOYS; NANOWIRES; RAMAN SPECTROSCOPY; SEMICONDUCTOR GROWTH;

GALLIUM ARSENIDE;

EID: 78650635173 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3517254 Document Type: Article

Times cited : (43)

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