Characterizing the electron transport properties of a single o110p InAs nanowire

Applied Physics Express

Volumn 7, Issue 8, 2014, Pages

  Cui, Zhixin ^a   Perumal, Rajagembu ^a   Ishikura, Tomotsugu ^a   Konishi, Keita ^a   Yoh, Kanji ^a   Motohisa, Junichi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; MAGNETIC MOMENTS; MOLECULAR BEAM EPITAXY; TRANSPORT PROPERTIES;

CONTROL SAMPLES; ELECTRICAL TRANSPORT PROPERTIES; ELECTRON SPINS; FIELD-EFFECT MOBILITIES; HALL EFFECT MEASUREMENT; INAS NANOWIRES; SPIN TRANSISTOR; SPINTRONICS DEVICE;

NANOWIRES;

EID: 84906232454     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.7.085001     Document Type: Article

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