Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

Crystal Growth and Design

Volumn 15, Issue 7, 2015, Pages 3105-3109

  Matteini, Federico ^a   Tütüncüoglu, Gözde ^a   Potts, Heidi ^a   Jabeen, Fauzia ^a   Fontcuberta I Morral, Anna ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT ANGLE; GALLIUM; GALLIUM ARSENIDE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM; SILICON; SILICON OXIDES;

GAAS NANOWIRES; HIGH PURITY; NANOWIRE GROWTH; NATIVE OXIDES; OXIDE THICKNESS; SELF ASSEMBLY PROCESS; SILICON SUBSTRATES; SILICON SURFACES;

NANOWIRES;

EID: 84934780050     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/acs.cgd.5b00374     Document Type: Article

References (49)

1. Day, A. W.; Thelander, C.; Lind, E.; Dick, K. A.; Borg, B. M.; Borgstrom, M.; Nilsson, P.; Wernersson, L. E. High-Performance InAs Nanowire MOSFETs IEEE Electron Device Lett. 2012, 33, 791
2. McAlpine, M. C.; Friedman, R. S.; Jin, S.; Lin, K.-h.; Wang, W. U.; Lieber, C. M. High-performance nanowire electronics and photonics on glass and plastic substrates Nano Lett. 2003, 3, 1531
3. Tian; Zheng, X.; Kempa, T. J.; Fang, Y.; Yu, N.; Yu, G.; Huang, J.; Liber, C. M. Coaxial silicon nanowires as solar cells and nanoelectronic power sources Nature 2008, 449, 885
4. Qian, F.; Li, Y.; Gradečak, S.; Park, H.-G.; Dong, Y.; Ding, Y.; Wang, Z. L.; Lieber, C. M. Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers Nat. Mater. 2008, 7, 701
5. Colombo, C.; Heiss, M.; Grätzel, M.; Fontcuberta i Morral, A. Gallium arsenide p-i-n radial structures for photovoltaic applications Appl. Phys. Lett. 2009, 173108
6. Krogstrup, P.; Jørgensen, H. I.; Heiss, M.; Demichel, O.; Holm, J. V.; Aagesen, M.; Nygard, J.; Fontcuberta i Morral, A. Single-nanowire solar cells beyond the Shockley-Queisser limit Nat. Photonics 2013, 7, 306-310
7. Mourik, V.; Zuo, K.; Frolov, S. M.; Plissard, S. R.; Bakkers, E. P. A. M.; Kouwenhoven, L. P. Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices Science 2012, 336, 1003
8. Shockley, W.; Queisser, H. J. Detailed balance limit of efficiency of pn junction solar cells J. Appl. Phys. 1961, 32, 510
9. Wallentin, J.; Anttu; Asoli, D.; Huffman, M.; Åberg, I.; Magnusson, M. H.; Siefer, G.; Fuss-Kailuweit, P.; Dimroth, F.; Witzigmann, B.; Xu, H. Q.; Samuelson, l.; Deppert, K.; Borgström, M. T. InP nanowire array solar cells achieving 13.8% efficiency by exceeding the ray optics limit Science 2013, 339, 1057
10. Kandala, A.; Betti, T.; Fontcuberta i Morral, A. General theoretical considerations on nanowire solar cell designs Phys. Status Solidi A 2009, 1, 173
11. Wagner, S.; Ellis, W. C. Vapor-Liquid-Solid mechanism of single crystal growth Appl. Phys. Lett. 1964, 4, 89
12. Hemesath, E. R.; Schreiber, D. K.; Gulsoy, E. B.; Kisielowski, C. F.; Petford-Long, A. K.; Voorhees, P. W.; Lauhon, L. J. Catalyst incorporation at defects during nanowire growth Nano Lett. 2012, 12, 167
13. Breuer, S.; Pfüller, C.; Flissikowski, T.; Brandt, O.; Grahn, H. T.; Geelhar, L.; Riechert, H. Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications Nano Lett. 2011, 11, 1276
14. Sze, S. M. Phys. Semicond. Devices; Wiley-Interscience: New York, 1981.
15. Slezák, J.; Ondřejček, M.; Chvoj, Z.; Cháb, V.; Conrad, H.; Heun, S.; Schmidt, T.; Ressel, B.; Prince, K. C. Surface diffusion of Au on Si(111): A microscopic study Phys. Rev. B 2000, 61, 16121
16. Colombo, C.; Spirkoska, D.; Frimmer, M.; Abstreiter, G.; Fontcuberta i Morral, A. Ga-assisted catalyst free growth mechanism of GaAs nanowires by molecular beam epitaxy Phys. Rev. B 2008, 77, 155326
17. Paek, J. H.; Nishiwaki, T.; Yamaguchi, M.; Sawaki, N. Catalyst free MBE-VLS growth of GaAs nanowires on (111)Si substrate Phys. Status Solidi C 2009, 6, 1436
18. Krogstrup, P.; Popovitz-Biro, R.; Johnson, E.; Madsen, M. H.; Nygard, J.; Shtrikman, H. Structural phase control in self-catalyzed growth of GaAs nanowires on Silicon (111) Nano Lett. 2010, 10, 4475
19. Mandl, B.; Stangl, J.; Hilner, E.; Zakharov, A. A.; Hillerich, K.; Dey, A. W.; Samuelson, L.; Bauer, G.; Deppert, K.; Mikkelsen, A. Growth mechanism of self-catalyzed group III-V nanowires Nano Lett. 2010, 10, 4443
20. Plissard, S.; Larrieu, G.; Wallart, X.; Caroff, P. High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning Nanotechnology 2011, 22, 275602
21. Ambrosini, S.; Fanetti, M.; Grillo, V.; Franciosi, A.; Rubini, S. Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires AIP Adv. 2011, 1, 042142
22. Han, N.; Wang, F.; Hou, J. J.; Yip, S.; Lin, H.; Fang, M.; Xiu, F.; Shi, X.; Hung, T.; Co, J. C. Manipulated growth of GaAs nanowires: controllable crystal quality and growth orientations via a supersaturation-controlled engineering process Cryst. Growth Des. 2012, 12, 6243
23. Priante, G.; Ambrosini, S.; Dubrovskii, V. G.; Franciosi, A.; Rubini, S. Stopping and resuming at will the growth of GaAs nanowires Cryst. Growth Des. 2013, 13, 3976
24. Uccelli, E.; Arbiol, J.; Magen, C.; Krogstrup, P.; Russo-Averchi, E.; Heiss, M.; Mugny, G.; Morier-Genoud, F.; Nygard, J.; Morante, R. J.; Fontcuberta i Morral, A. Three-dimensional multiple-order twinning of self-catalyzed GaAs nanowires on Si substrates Nano Lett. 2011, 11, 3827
25. Glas, F.; Harmand, J.-C.; Patriarche, G. Why does Wurtzite form in nanowires of III-V Zinc Blende semiconductors? Phys. Rev. Lett. 2007, 99, 146101
26. Ramdani, M. R.; Harmand, J.-C.; Glas, F.; Patriarche, G.; Travers, L. Arsenic pathways in self-catalyzed growth of GaAs nanowires Cryst. Growth Des. 2013, 13, 91
27. Dubrovskii, V. G.; Sibirev, N. V. Growth thermodynamics of nanowires and its application to polytypism of Zinc Blende III-V nanowires Phys. Rev. B 2008, 77, 035414
28. Krogstrup, P.; Curiotto, S.; Johnson, E.; Aagesen, M.; Nygard, J.; Chatain, D. Impact of the liquid phase shape on the structure of III-V nanowires Phys. Rev. Lett. 2011, 106, 125505
29. Krogstrup, P.; Jørgensen, H. I.; Johnson, E.; Madsen, M. H.; Sørensen, C. B.; Fontcuberta i Morral, A.; Aagesen, M.; Nygård, J.; Glas, F. Advances in the theory of III-V nanowire growth dynamics J. Phys. D: Appl. Phys. 2013, 46, 313001
30. Kang, J.-H.; Gao, Q.; Joyce, H. J.; Tan, H. H.; Jagadish; Kim, J.; Guo, Y.; Xu, H.; Zou, J.; Fickenscher, M. A.; Smith, L. M.; Jackson, H. E.; Yarrison-Rice, J. M. Defect-free GaAs/AlGaAs core-shell nanowires on Si substrates Cryst. Growth Des. 2011, 11, 3109
31. Bastiman, F.; KüPers, H.; Somaschini, C.; Geelhaar, L. Predictive growth of self-assisted GaAs nanowires on Si(111) EuroMBE Book of Abstracts 2015, 101
32. Matteini, F.; Tütüncüoʇlu, G.; Rüffer, D.; Alarcón-Lladó, E.; Fontcuberta i Morral, A. Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature J. Cryst. Growth 2014, 404, 246
33. Fontcuberta i Morral, A.; Colombo, C.; Abstreiter, G.; Arbiol, J.; Morante, J. C. Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires Appl. Phys. Lett. 2008, 92, 063112
34. Raider, S. I.; Flitsch, R.; Palmer, M. J. Oxide growth on etched Silicon in Air at room temperature J. Electrochem. Soc. 1975, 122, 413
35. Thumser, U.; Beck, P.; Stewart, D. Stanford Nanofabrication Facility; 2001; http://snf.stanford.edu/Process/Characterization/SiO2Growth0.pdf.
36. 2 film Phys. Rev. B 1999, 59, 10289
37. Nitta, Y.; Shibata, M.; Fujita, K.; Ichikawa, M. Nanometer-scale Si selective growth on Ga-adsorbed voids in ultrathin SiO2 films Surf. Sci. 1999, 431, 565
38. Hardy, S. C. The surface tension of liquid gallium J. Cryst. Growth 1985, 71, 602
39. Al-Bayati, A. H.; Orrman-Rossiter, K. G.; van den Berg, J. A.; Armour, D. G. Composition and structure of the native Si oxide by high depth resolution medium energy ion scattering Surf. Sci. 1991, 241, 91
40. Muller, D. A.; Sorsch, T.; Moccio, S.; Baumann, F. H.; Evans-Lutterodt, K.; Timp, G. The electronic gate structure at the atomic scale of ultrathin gate oxides Nature 1999, 399, 758
41. Gusev, E. P.; Lu, H. C.; Gustafsson, T.; Garfunkel, E. Growth mechanism of thin silicon oxide films on Si(100) studied by medium energy ion scattering Phys. Rev. B 1995, 53, 1759
42. Khalilov, U.; Pourtois, G.; Huygh, S.; van Duin, A. C. T.; Neyts, E. C.; Bogaerts, A. New mechanism for oxidation of native silicon oxide J. Phys. Chem. C 2013, 117, 9819
43. Watanabe, H.; Fujita, S.; Maruno, S.; Fujita, K.; Ichikawa, M. Selective thermal decomposition of ultrathin silicon oxide layers induced by electron-stymulated oxygen desorption Appl. Phys. Lett. 1997, 71, 1038
44. Chao, S. S.; Tyler, J. E.; Takagi, Y.; Pai, P. G.; Lucovski, G.; Lin, S. Y.; Wong, C. K.; Mantini, M. J. A study of chemical bonding in suboxides of silicon using using Auger electron spectroscopy J. Vac. Sci. Technol., A 1986, 4, 1574
45. Seah, M. P.; Spencer, S. J.; Bensebaa, F.; Vickridge, I.; Danzebrink, H.; Krumrey, M.; Gross, T.; Oesterle, W.; Wendler, E.; Rheinländer, B.; Azuma, Y.; Kojima, I.; Suzuki, N.; Suzuki, M.; Tanuma, S.; Moon, D. W.; Lee, H. J.; Cho, H. M.; Chen, H. Y.; Wee, A. T. S.; Osipowicz, T.; Pan, J. S.; Jordaan, W. A.; Hauert, R.; Klotz, U.; van der Marel, C.; Verheijen, M.; Tamminga, Y.; Jeynes, C.; Bailey, P.; Biswas, S.; Falke, U.; Nguyen, N. V.; Chandler-Horowitz, D.; Ehrstein, J. R.; Muller, D.; Dura, J. A. Critical review of the current status of thickness measurements for ultrathin SiO2 on Si Part V: Results of a CCQM pilot study Surf. Interface Anal. 2004, 36, 1269
46. Gusev, E. P.; Lu, H. C.; Gustafsson, T.; Garfunkel, E. Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering Phys. Rev. B 1995, 52, 1759
47. 2/Si interface J. Appl. Phys. 1998, 84, 6064
48. Soria, F. A.; Patrito, E. M.; Paredes-Olivera, P. Oxidation of hydrogenated Si(111) by a radical propagation mechanism J. Phys. Chem. C 2012, 116, 24607
49. 2-catalyzed silicon nanowires Nano Lett. 2006, 6, 2140