Shell-doping of GaAs nanowires with Si for n-type conductivity

Nano Research

Volumn 5, Issue 11, 2012, Pages 796-804

  Dimakis, Emmanouil ^a   Ramsteiner, Manfred ^a   Tahraoui, Abbes ^a   Riechert, Henning ^a   Geelhaar, Lutz ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

core shell; GaAs; molecular beam epitaxy; nanowires; Raman spectroscopy; Si doping

Indexed keywords

EID: 84869866800     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-012-0263-9     Document Type: Article

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