Free standing modulation doped core-shell GaAs/AlGaAs hetero-nanowires

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 9, 2011, Pages 353-355

  Spirkoska, Dance ^a   Fontcuberta i Morral, Anna ^a,b   Dufouleur, Joseph ^a   Xie, Qiushi ^a   Abstreiter, Gerhard ^a,c  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b EPFL   (Switzerland)

^c TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

AlGaAs; Core shell nanowires; Doping; GaAs; Molecular beam epitaxy

Indexed keywords

ALGAAS; ALGAAS/GAAS; BACK-GATE; CORE-SHELL; CORE-SHELL NANOWIRES; DELTA-DOPED; DELTA-DOPING; FREE CARRIERS; GAAS; GAAS/ALGAAS; LOW TEMPERATURES; MODULATION-DOPED; PERSISTENT PHOTOCONDUCTIVITY;

ALUMINUM GALLIUM ARSENIDE; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS;

SHELLS (STRUCTURES);

EID: 80052285490     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105338     Document Type: Article

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