Electrical and optical characterization of surface passivation in GaAs nanowires

Nano Letters

Volumn 12, Issue 9, 2012, Pages 4484-4489

  Chang, Chia Chi ^a   Chi, Chun Yung ^a,b   Yao, Maoqing ^a,b   Huang, Ningfeng ^a,b   Chen, Chun Chung ^a,b   Theiss, Jesse ^a,b   Bushmaker, Adam W ^c   Lalumondiere, Stephen ^c   Yeh, Ting Wei ^a,b   Povinelli, Michelle L ^a,b   Zhou, Chongwu ^a,b   Dapkus, P Daniel ^a,b   Cronin, Stephen B ^a,b  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^b Powell Hall of Engineering ^*  (United States)

^c AEROSPACE CORPORATION   (United States)

Author keywords

EBIC; GaAs; MOCVD; selective area growth; surface passivation; TR PL

Indexed keywords

EBIC; GAAS; SELECTIVE AREA GROWTH; SURFACE PASSIVATION; TR-PL;

ELECTRIC CURRENTS; GALLIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PASSIVATION; SEMICONDUCTING GALLIUM;

NANOWIRES;

GALLIUM; GALLIUM ARSENIDE; NANOTUBE; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; MATERIALS TESTING; PARTICLE SIZE; REFRACTOMETRY; SURFACE PROPERTY; ULTRASTRUCTURE;

ARSENICALS; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; GALLIUM; MATERIALS TESTING; NANOTUBES; PARTICLE SIZE; REFRACTOMETRY; SURFACE PROPERTIES;

EID: 84866331163     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl301391h     Document Type: Article

References (34)

1. Tomioka, K.; Motohisa, J.; Hara, S.; Hiruma, K.; Fukui, T. GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si Nano Lett. 2010, 10 (5) 1639-1644
2. Geisz, J. F.; Kurtz, S.; Wanlass, M. W.; Ward, J. S.; Duda, A.; Friedman, D. J.; Olson, J. M.; McMahon, W. E.; Moriarty, T. E.; Kiehl, J. T. High-efficiency GaInP/GaAs/InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction Appl. Phys. Lett. 2007, 91 (2) 023502-3
3. Nelson, R. J.; Sobers, R. G. Minority-carrier lifetimes and internal quantum efficiency of surface-free GaAs J. Appl. Phys. 1978, 49 (12) 6103-6108 (Pubitemid 9423926)
4. Lloyd-Hughes, J.; Merchant, S. K. E.; Fu, L.; Tan, H. H.; Jagadish, C.; Castro-Camus, E.; Johnston, M. B. Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs Appl. Phys. Lett. 2006, 89 (23) 232102-3
5. Katzenmeyer, A. M.; Léonard, F. o.; Talin, A. A.; Wong, P.-S.; Huffaker, D. L. Poole-Frenkel Effect and Phonon-Assisted Tunneling in GaAs Nanowires Nano Lett. 2010, 10 (12) 4935-4938
6. Suyatin, D. B.; Thelander, C.; Björk, M. T.; Maximov, I.; Samuelson, L. Sulfur passivation for ohmic contact formation to InAs nanowires Nanotechnology 2007, 18, 105307
7. Sheldon, M. T.; Eisler, C. N.; Atwater, H. A. GaAs Passivation with Trioctylphosphine Sulfide for Enhanced Solar Cell Efficiency and Durability Adv. Energy Mater. 2012, 2 (3) 339-344
8. Demichel, O.; Heiss, M.; Bleuse, J.; Mariette, H.; Fontcuberta i Morral, A., Impact of surfaces on the optical properties of GaAs nanowires Appl. Phys. Lett. 2010, 97 (20) 201907-3
9. Perera, S.; Fickenscher, M. A.; Jackson, H. E.; Smith, L. M.; Yarrison-Rice, J. M.; Joyce, H. J.; Gao, Q.; Tan, H. H.; Jagadish, C.; Zhang, X.; Zou, J. Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures Appl. Phys. Lett. 2008, 93 (5) 053110-3
10. Parkinson, P.; Joyce, H. J.; Gao, Q.; Tan, H. H.; Zhang, X.; Zou, J.; Jagadish, C.; Herz, L. M.; Johnston, M. B. Carrier Lifetime and Mobility Enhancement in Nearly Defect-Free Core-Shell Nanowires Measured Using Time-Resolved Terahertz Spectroscopy Nano Lett. 2009, 9 (9) 3349-3353
11. Ouattara, L.; Mikkelsen, A.; Sköld, N.; Eriksson, J.; Knaapen, T.; Ćavar, E.; Seifert, W.; Samuelson, L.; Lundgren, E. GaAs/AlGaAs Nanowire Heterostructures Studied by Scanning Tunneling Microscopy Nano Lett. 2007, 7 (9) 2859-2864 (Pubitemid 47522450)
12. Tomioka, K.; Kobayashi, Y.; Motohisa, J.; Hara, S.; Fukui, T. Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate Nanotechnology 2009, 20, 145302
13. Trentler, T. J.; Hickman, K. M.; Goel, S. C.; Viano, A. M.; Gibbons, P. C.; Buhro, W. E. Solution-Liquid-Solid Growth of Crystalline III-V Semiconductors: An Analogy to Vapor-Liquid-Solid Growth Science 1995, 270 (5243) 1791-1794 (Pubitemid 126635481)
14. Duan, X.; Lieber, C. M. General Synthesis of Compound Semiconductor Nanowires Adv. Mater. 2000, 12 (4) 298-302 (Pubitemid 30551854)
15. Duan, X.; Wang, J.; Lieber, C. M. Synthesis and optical properties of gallium arsenide nanowires Appl. Phys. Lett. 2000, 76 (9) 1116-1118
16. Lee, H. G.; Jeon, H. C.; Kang, T. W.; Kim, T. W. Gallium arsenide crystalline nanorods grown by molecular-beam epitaxy Appl. Phys. Lett. 2001, 78 (21) 3319-3321 (Pubitemid 33611551)
17. Shi, W. S.; Zheng, Y. F.; Wang, N.; Lee, C. S.; Lee, S. T. A General Synthetic Route to III-V Compound Semiconductor Nanowires Adv. Mater. 2001, 13 (8) 591-594 (Pubitemid 32432248)
18. Shi, W. S.; Zheng, Y. F.; Wang, N.; Lee, C. S.; Lee, S. T. Oxide-assisted growth and optical characterization of gallium-arsenide nanowires Appl. Phys. Lett. 2001, 78 (21) 3304-3306 (Pubitemid 33611546)
19. Noborisaka, J.; Motohisa, J.; Hara, S.; Fukui, T. Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy Appl. Phys. Lett. 2005, 87 (9) 093109-3
20. Chu, H.-J.; Yeh, T.-W.; Stewart, L.; Dapkus, P. D. Wurtzite InP nanowire arrays grown by selective area MOCVD Phys. Status Solidi C 2010, 7 (10) 2494-2497
21. Chang, C.-C.; Chen, H.; Chen, C.-C.; Hung, W.-H.; Hsu, I.-K.; Theiss, J.; Zhou, C.; Cronin, S. B. Tailoring the crystal structure of individual silicon nanowires by polarized laser annealing Nanotechnology 2011, 22, 305709
22. 1- xAs using Raman spectroscopy and x-ray diffraction J. Vac. Sci. Technol., B 1994, 12, 1078-1081
23. Wasilewski, Z. R.; Dion, M. M.; Lockwood, D. J.; Poole, P.; Streater, R. W.; SpringThorpe, A. J. Composition of AlGaAs J. Appl. Phys. 1997, 81 (4) 1683-1694 (Pubitemid 127572523)
24. Madaria, A. R.; Yao, M.; Chi, C.; Huang, N.; Lin, C.; Li, R.; Povinelli, M. L.; Dapkus, P. D.; Zhou, C. Toward Optimized Light Utilization in Nanowire Arrays Using Scalable Nanosphere Lithography and Selected Area Growth Nano Lett. 2012, 12 (6) 2839-2845
25. Montazeri, M.; Fickenscher, M.; Smith, L. M.; Jackson, H. E.; Yarrison-Rice, J.; Kang, J. H.; Gao, Q.; Tan, H. H.; Jagadish, C.; Guo, Y.; Zou, J.; Pistol, M.-E.; Pryor, C. E. Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires Nano Lett. 2010, 10 (3) 880-886
26. De-Sheng, J.; Makita, Y.; Ploog, K.; Queisser, H. J. Electrical properties and photoluminescence of Te-doped GaAs grown by molecular beam epitaxy J. Appl. Phys. 1982, 53 (2) 999-1006 (Pubitemid 12476824)
27. Titova, L. V.; Hoang, T. B.; Yarrison-Rice, J. M.; Jackson, H. E.; Kim, Y.; Joyce, H. J.; Gao, Q.; Tan, H. H.; Jagadish, C.; Zhang, X.; Zou, J.; Smith, L. M. Dynamics of Strongly Degenerate Electron-Hole Plasmas and Excitons in Single InP Nanowires Nano Lett. 2007, 7 (11) 3383-3387 (Pubitemid 350216032)
28. Demichel, O.; Calvo, V.; Besson, A.; Noé, P.; Salem, B.; Pauc, N.; Oehler, F.; Gentile, P.; Magnea, N. Surface Recombination Velocity Measurements of Efficiently Passivated Gold-Catalyzed Silicon Nanowires by a New Optical Method Nano Lett. 2010, 10 (7) 2323-2329
29. Dan, Y.; Seo, K.; Takei, K.; Meza, J. H.; Javey, A.; Crozier, K. B. Dramatic Reduction of Surface Recombination by in Situ Surface Passivation of Silicon Nanowires Nano Lett. 2011, 11 (6) 2527-2532
30. Nelson, R. J.; Sobers, R. G. Interfacial recombination velocity in GaAlAs/GaAs heterostructures Appl. Phys. Lett. 1978, 32 (11) 761-763
31. Joyce, H. J.; Gao, Q.; Tan, H. H.; Jagadish, C.; Kim, Y.; Zhang, X.; Guo, Y.; Zou, J. Twin-Free Uniform Epitaxial GaAs Nanowires Grown by a Two-Temperature Process Nano Lett. 2007, 7 (4) 921-926 (Pubitemid 46717734)
32. Breuer, S.; Pfüller, C.; Flissikowski, T.; Brandt, O.; Grahn, H. T.; Geelhaar, L.; Riechert, H. Suitability of Au- and Self-Assisted GaAs Nanowires for Optoelectronic Applications Nano Lett. 2011, 11 (3) 1276-1279
33. Walukiewicz, W.; Lagowski, J.; Jastrzebski, L.; Gatos, H. C. Minority-carrier mobility in p-type GaAs J. Appl. Phys. 1979, 50 (7) 5040-5042
34. Harmon, E. S.; Lovejoy, M. L.; Melloch, M. R.; Lundstrom, M. S.; de Lyon, T. J.; Woodall, J. M. Experimental observation of a minority electron mobility enhancement in degenerately doped p-type GaAs Appl. Phys. Lett. 1993, 63 (4) 536-538