In situ chemical vapor deposition of graphene and hexagonal boron nitride heterostructures

Current Applied Physics

Volumn 16, Issue 9, 2016, Pages 1175-1191

  Wu, Qinke ^a   Wongwiriyapan, Winadda ^a   Park, Ji Hoon ^b   Park, Sangwoo ^a   Jung, Seong Jun ^a   Jeong, Taehwan ^a   Lee, Sungjoo ^a,b   Lee, Young Hee ^b   Song, Young Jae ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

Chemical vapor deposition; Graphene; Hexagonal boron nitride; In plane heterostructure; Vertical heterostructure

Indexed keywords

BORON NITRIDE; CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; III-V SEMICONDUCTORS; NITRIDES;

FABRICATION PROCESS; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); IN-PLANE DIRECTION; PROTECTIVE LAYERS; SELECTIVE SYNTHESIS; STRUCTURAL CONFIGURATIONS; VERTICAL HETEROSTRUCTURE;

GRAPHENE;

EID: 84967163439     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2016.04.024     Document Type: Review

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