Continuous growth of hexagonal graphene and boron nitride in-plane heterostructures by atmospheric pressure chemical vapor deposition

ACS Nano

Volumn 7, Issue 11, 2013, Pages 10129-10138

  Han, Gang Hee ^a,b   Rodríguez Manzo, Julio A ^a   Lee, Chan Woo ^a   Kybert, Nicholas J ^a   Lerner, Mitchell B ^a,c   Qi, Zhengqing John ^a   Dattoli, Eric N ^a   Rappe, Andrew M ^a   Drndic, Marija ^a   Johnson, A T Charlie ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b Sungkyunkwan University   (South Korea)

^c LAC+USC Medical Center   (United States)

Author keywords

boron nitride; chemical vapor deposition; electronic devices; graphene; heterostructure

Indexed keywords

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; CRYSTALLOGRAPHIC ORIENTATIONS; ELECTRICALLY ACTIVES; ELECTRONIC DEVICE; ELECTRONIC FUNCTIONALITY; HETEROSTRUCTURE; HEXAGONAL BORON NITRIDE; PROPERTY MEASUREMENT;

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GRAPHENE; HETEROJUNCTIONS; MONOLAYERS; VAPORS;

BORON NITRIDE;

EID: 84888876948     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn404331f     Document Type: Article

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