Repeated growth-etching-regrowth for large-Area defect-free single-crystal graphene by chemical vapor deposition

ACS Nano

Volumn 8, Issue 12, 2014, Pages 12806-12813

  Ma, Teng ^a   Ren, Wencai ^a   Liu, Zhibo ^a   Huang, Le ^b   Ma, Lai Peng ^a   Ma, Xiuliang ^a   Zhang, Zhiyong ^b   Peng, Lian Mao ^b   Cheng, Hui Ming ^a  

^a INSTITUTE OF METAL RESEARCH   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

chemical vapor deposition; defect free; graphene; large size; single crystal

Indexed keywords

CRYSTALLIZATION; DEFECTS; ETCHING; GRAPHENE; HALL MOBILITY; HOLE MOBILITY; NUCLEATION; SINGLE CRYSTALS;

AMBIENT CONDITIONS; CHEMICAL VAPOR DEPOSITIONS (CVD); DEFECT-FREE; HIGH QUALITY SINGLE CRYSTALS; LARGE SIZE; LOWER TEMPERATURES; NUCLEATION DENSITIES; OPTOELECTRONIC APPLICATIONS;

CHEMICAL VAPOR DEPOSITION;

EID: 84919760619     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn506041t     Document Type: Article

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